Abstract
The dielectric parameters of calcium fluoride films grown on the Si(100) surface by solid-phase epitaxy (group 2) and without it (group 1) are analyzed. It is established experimentally that the deposition mode of CaF2 films immediately after growth of the Si buffer layer at a substrate temperature of 530°C is not suitable for producing high-quality dielectric layers. The use of solid-phase epitaxy at the initial stage of the nucleation of CaF2 layers enables the production of single crystal uniformly thick films with high dielectric properties.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
V. N. Mordkovich, Mater. Elektron. Tekh., No. 2, 4 (1998).
N. I. Filimonova, Candidate’s Dissertation in Technical Sciences (Tomsk Polytech. Univ., Tomsk, 2011) [in Russian].
D. V. Vyalykh and S. I. Fedoseenko, Semiconductors 33 (6), 654 (1999).
K. Izumi, Vacuum 42 (5–6), 333 (1991).
R. W. Fathauer, Appl. Phys. Lett. 45 (5), 519 (1984).
V. A. Ilyushin, A. A. Velichko, and N. I. Filimonova, Nauch. Vestn. Novosib. Gos. Tech. Univ., No. 3, 197 (2007).
A. A. Velichko, V. A. Ilyushin, and N. I. Filimonova, Nauch. Vestn. Novosib. Gos. Tech. Univ., No. 3, 111 (2010).
A. A. Velichko, V. A. Ilyushin, N. I. Filimonova, and A. V. Katsyuba, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 7 (3), 488 (2013).
A. A. Velichko, V. A. Ilyushin, and N. I. Filimonova, in Proceedings of the 12th International Conference on Actual Problems of Electronic Instrument Engineering (Novosib. Gos. Tech. Univ., Novosibirsk, 2014), Vol. 1, p. 22.
A. V. Katsyuba and A. Yu. Krupin, in Proceedings of the 3rd All-Russian Youth Conference on Functional Nanomaterials and High-Purity Substances (Ross. Khim.- Technol. Univ., Moscow, 2012), p. 57.
A. A. Velichko, V. A. Ilyushin, D. I. Ostertak, Yu. G. Peisakhovich, and N. I. Filimonova, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 1 (4), 479 (2007).
A. A. Velichko, V. A. Ilyushin, D. I. Ostertak, and N. I. Filimonova, in Modern Problems of Geodesy and Optics: Collection of Papers (Sib. Gos. Geodez. Akad., Novosibirsk, 2006), p. 58.
A. A. Velichko, V. A. Ilyushin, D. I. Ostertak, and N. I. Filimonova, in Proceedings of X Conference on Physics of Semiconductor, Electrical, and Magnetic Materials (Inst. Avtomat. Protsessov Upravl, Dal’nevost. Otd. Ross. Akad. Nauk, Vladivostok, 2006), p. 340.
A. G. Denisov and G. S. Dordzhin, Reports on Electronic Engineering (Tsentr. Nauch.-Issled. Inst. Elektronika, Moscow, 1982) [in Russian].
L. A. Zhukova and M. A. Gurevich, in Electron Diffraction of Surface Layers and Films of Semiconductor Materials (Metallurgiya, Moscow, 1971), p. 68 [in Russian].
A. Belenchuk, A. Fedorov, H. Huhtinen, V. Kantser, R. Laiho, O. Shapoval, V. Zakhvalinskii, Thin Solid Films 358, 277 (2000).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.A. Ilyushin, A.A. Velichko, A.Yu. Krupin, V.A. Gavrilenko, A.N. Savinov, A.V. Katzuba, 2016, published in Poverkhnost’, 2016, No. 11, pp. 95–99.
Rights and permissions
About this article
Cite this article
Ilyushin, V.A., Velichko, A.A., Krupin, A.Y. et al. Features of the surface morphology of CaF2/Si(100) films obtained by solid-phase epitaxy. J. Surf. Investig. 10, 1192–1196 (2016). https://doi.org/10.1134/S1027451016050074
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1027451016050074