Plasma sputtering of Pb1–x Eu x Te films with varied composition and structure
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We investigate the sputtering of single-crystal and polycrystalline films of Pb1–x Eu x Te (x = 0.02–0.10) in high-frequency inductively coupled argon plasma. Layers of Pb1–x Eu x Te are grown via molecular beam epitaxy on barium-fluoride substrates of the (111) orientation at 340 and 200°C. For single-crystal films, the dependence of the sputtering rate on the europium concentration is found. For polycrystalline layers, a decrease in the sputtering rate is observed. This is caused by the effect of europium oxidation at the surface of the polycrystallites.
Keywordslead chalcogenides molecular-beam epitaxy films high-frequency inductively coupled argon plasma plasma surface treatment
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