Abstract
InAlAs/InGaAs/InAlAs nanoheterostructures with different structures of metamorphic buffer layer and quantum well, which were grown by means of molecular-beam epitaxy on GaAs and InP substrates, are investigated. The laboratory technology of the growth of the given nanoheterostructures with predicted properties is perfected. The potential of an approach based on the comprehensive analysis of experimental data obtained via different techniques, namely, X-ray diffractometry, electron diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and atomic-force microscopy is studied. The metamorphic buffer layer design is improved on the basis of the results of the performed investigations. A method whereby balanced-mismatched superlattices are introduced directly inside the metamorphic buffer layer is proposed. It is established that the technological parameters of the growth of nanoheterostructures affect their structural perfection and electrophysical properties.
Article PDF
We’re sorry, something doesn't seem to be working properly.
Please try refreshing the page. If that doesn't work, please contact support so we can address the problem.
References
D. V. Lavrukhin, A. E. Yachmenev, R. R. Galiev, R. A. Khabibullin, D. S. Ponomarev, Yu. V. Fedorov, and P. P. Maltsev, Semiconductors 48 (1), 69 (2014).
V. A. Kulbachinskii, N. A. Yuzeeva, G. B. Galiev, E. A. Klimov, I. S. Vasilevskii, R. A. Khabibullin, and D. S. Ponomarev, Semicond. Sci. Technol. 27, 035021 (2012).
A. E. Yachmenev, A. S. Bugaev, Yu. V. Fedorov, R. A. Khabibullin, D. S. Ponomarev, and G. B. Galiev, Nano-Mikrosist. Tekh., No. 8, 28 (2014).
R. M. Imamov and I. A. Subbotin, J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech. 4 (1), 104 (2010).
G. B. Galiev, S. S. Pushkarev, E. A. Klimov, P. P. Maltsev, R. M. Imamov, and I. A. Subbotin, Crystallogr. Rep. 59 (2), 258 (2014).
G. B. Galiev, I. S. Vasil’evskii, S. S. Pushkarev, R. M. Imamov, P. A. Buffat, and B. Dwir, J. Cryst. Growth 366, 55 (2013).
A. L. Vasil’ev, I. S. Vasil’evskii, G. B. Galiev, R. M. Imamov, E. A. Klimov, M. V. Kovalchuk, D. S. Ponomarev, V. V. Roddatis, and I. A. Subbotin, Crystallogr. Rep. 56 (2), 298 (2011).
G. B. Galiev, E. A. Klimov, A. N. Klochkov, P. P. Maltsev, S. S. Pushkarev, O. M. Zhigalina, R. M. Imamov, A. N. Kuskova, and D. N. Khmelenin, Crystallogr. Rep. 58 (6), 914 (2013).
A. S. Bugaev, G. B. Galiev, P. P. Mal’tsev, S. S. Pushkarev, and Yu. V. Fedorov, Nano-Mikrosist. Tekh., No. 10, 14 (2012).
S. S. Pushkarev, I. S. Vasil’evskii, A. N. Vinichenko, G. B. Galiev, and E. A. Klimov, in Proceedings of the XIX International Symposium on Nanophysics and Nanoelectronics (2015), Vol. 2, p. 634.
G. B. Galiev, A. L. Vasiliev, R. M. Imamov, E. A. Klimov, P. P. Maltsev, S. S. Pushkarev, M. Yu. Presniakov, and I. N. Trunkin, Crystallogr. Rep. 59 (6), 900 (2014).
S. S. Pushkarev, Candidate’s Dissertation in Mathematics and Physics (Inst. Microwave Seconduct. Electron., Russ. Acad. Sci., Moscow, 2013).
J. Tersoff, Appl. Phys. Lett. 62 (7), 693 (1993).
G. B. Galiev, I. S. Vasil’evskii, E. A. Klimov, S. S. Pushkarev, A. N. Klochkov, P. P. Maltsev, M. Yu. Presniakov, I. N. Trunkin, and A. L. Vasiliev, J. Cryst. Growth 392, 11 (2014).
A. M. Semenov, B. Ya. Mel’tser, V. A. Solov’ev, T. A. Komissarova, A. A. Sitnikova, D. A. Kirilenko, A. M. Nadtochii, T. V. Popova, P. S. Kop’ev, and S. V. Ivanov, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 45 (10), 1379 (2011).
I. A. Sluchinskaya, Fundamentals of Materials Science and Semiconductor Technology (Mir, Moscow, 2002) [in Russian].
E. S. Semenova, E. A. Zhukov, A. P. Vasil’ev, S. S. Mikhrin, A. R. Kovsh, V. M. Ustinov, Yu. G. Musikhin, S. A. Blokhin, A. G. Gladyshev, and N. N. Ledentsov, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 37 (9), 1127 (2003).
G. B. Galiev, S. S. Pushkarev, I. S. Vasil’evskii, O. M. Zhigalina, E. A. Klimov, V. G. Zhigalina, and R. M. Imamov, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 47 (4), 510 (2013).
S. V. Khazanova, N. V. Baidus’, B. N. Zvonkov, D. A. Pavlov, N. V. Malekhonova, V. E. Degtyarev, D. S. Smotrin, and I. A. Bobrov, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 46 (12), 1510 (2012).
M. Sexl, G. Böhm, D. Xu, H. Heiß, S. Kraus, G. Trankle, and G. Weimann, J. Cryst. Growth 175–176, 915 (1997).
H. J. Chen, H. A. McKay, R. M. Feenstra, G. C. Aers, P. J. Poole, R. L. Williams, S. Charbonneau, P. G. Piva, T. W. Simpson, and I. V. Mitchell, J. Appl. Phys. 89, 4815 (2001).
G. B. Galiev, S. S. Pushkarev, A. S. Orekhov, R. R. Galiev, E. A. Klimov, P. P. Maltsev, and R. M. Imamov, Crystallogr. Rep. 59 (3), 425 (2014).
P. Stadelmann, The Java Electron Microscopy Software (JEMS) (2012), http://cimewww.epfl.ch
C. Yeh, Z. W. Lu, S. Froyen, and A. Zunger, Phys. Rev. B: Condens. Matter Mater. Phys. 46, 10086 (1992).
G. B. Galiev, I. S. Vasil’evskii, E. A. Klimov, S. S. Pushkarev, and O. A. Ruban, RF Patent No. 2474923, Byull. Izobret. No. 4 (2013).
G. B. Galiev, I. S. Vasil’evskii, E. A. Klimov, S. S. Pushkarev, and O. A. Ruban, RF Patent No. 2474924, Byull. Izobret. No. 4 (2013).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © G.B. Galiev, E.A. Klimov, R.M. Imamov, G.V. Ganin, S.S. Pushkarev, P.P. Maltsev, O.M. Zhigalina, A.S. Orekhov, A.L. Vasil’ev, M.Yu. Presniakov, I.N. Trunkin, 2016, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2016, No. 5, pp. 32–47.
Rights and permissions
About this article
Cite this article
Galiev, G.B., Klimov, E.A., Imamov, R.M. et al. High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures. J. Surf. Investig. 10, 495–509 (2016). https://doi.org/10.1134/S1027451016030095
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1027451016030095