Abstract
The formation of radiation defects in Si under 1–10-MeV proton bombardment is analyzed. Numerical simulation is carried out, and histograms of the distribution of the energy transferred to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. Single Frenkel pairs with closely located components are produced in the first range (small energies). Recoil atoms of the second range have an energy sufficient for the production of a displacement cascade. As a result, nanoscale regions with high densities of vacancies and different types of their complexes appear. In addition, as the energy of the primary knocked-out atoms increases, the average distance between genetically related Frenkel pairs increases, and, as a consequence, the fraction of pairs that are not recombined under bombardment increases.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. W. Corbett and J. C. Bourgoin, Point Defects in Solids, Vol. 2: Semiconductors and Molecular Crystals, Ed. by J. H. Crawford and L. M. Slifkin (Plenum, New York, London, 1975).
E. Holmström, A. Kuronen, and K. Nordlund, Phys. Rev. B: Condens. Matter Mater. Phys. 78, 045202 (2008).
G. J. Dienes and G. H. Vineyard, Radiation Effects in Solids (Interscience, New York, 1957).
V. Kozlovski and V. Abrosimova, Int. J. High Speed Electron. Syst. 15 (1), 1 (2005).
C. Claeys and E. Simoen, Radiation Effects in Advanced Semiconductor Materials and Devices (Springer, Berlin, 2002).
A. Holmes-Siedle and L. Adams, Handbook of Radiation Effects (Oxford University Press, Oxford, 1993).
V. V. Kozlovskii, A. E. Vasil’ev, and A. A. Lebedev, J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech. 9, 231 (2015).
J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
G. H. Kinchin and R. S. Pease, Rep. Prog. Phys. 18, 1 (1955).
V. V. Emtsev, G. A. Oganesyan, N. V. Abrosimov, et al., Solid State Phenom. 205–206, 422 (2014).
D. V. Davydov, A. A. Lebedev, V. V. Kozlovski, et al., Phys. Rev. B: Condens. Matter Mater. Phys. 308, 641 (2001).
A. A. Lebedev, A. I. Veinger, D. V. Davydov, et al., Semiconductors 34 (8), 861 (2000).
N. Yu. Arutyunov, M. Elsayed, R. C. Krause-Rehberg, et al., Solid State Phenom. 205–206, 317 (2014).
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, et al., Semiconductors 48 (11), 1438 (2014).
S. J. Taylor, M. Yamaguchi, T. Yamaguchi, et al., J. Appl. Phys. 83 (9), 4620 (1998).
A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer, et al., IEEE Trans. Nucl. Sci. 49 (6), 2733 (2002).
A. A. Lebedev, A. I. Veinger, D. V. Davydov, et al., Semiconductors 34 (9), 1016 (2000).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.V. Kozlovski, A.E. Vasil’ev, A.A. Lebedev, 2016, published in Poverkhnost’, 2016, No. 7, pp. 19–24.
Rights and permissions
About this article
Cite this article
Kozlovski, V.V., Vasil’ev, A.E. & Lebedev, A.A. Effect of recoil atoms on radiation-defect formation in semiconductors under 1–10-MeV proton irradiation. J. Surf. Investig. 10, 693–697 (2016). https://doi.org/10.1134/S1027451016020294
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1027451016020294