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Investigation of the interface of insulated silicon tensoresistive Frame-on-Silicon heterostructure for MEMS pressure transducers


The results of analysis of the surface morphology of transition regions at the interfaces of a hetero-structure of single silicon–glassy dielectric–single silicon, used as a chip in the microelectromechanical systems (MEMS) of tensoresistive pressure transducers, are presented. The interfaces are studied by scanning electron microscopy and atomic-force microscopy (AFM). Possible reasons for the formation of local centers of mechanical stress in the transition regions and at the chip surface are discussed.

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Correspondence to L. V. Sokolov.

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Original Russian Text © L.V. Sokolov, 2016, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2016, No. 2, pp. 86–90.

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Sokolov, L.V. Investigation of the interface of insulated silicon tensoresistive Frame-on-Silicon heterostructure for MEMS pressure transducers. J. Synch. Investig. 10, 241–244 (2016).

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  • heterostructures
  • silicon-on-insulator
  • microelectromechanical systems