Skip to main content

Investigation of the interface of insulated silicon tensoresistive Frame-on-Silicon heterostructure for MEMS pressure transducers

Abstract

The results of analysis of the surface morphology of transition regions at the interfaces of a hetero-structure of single silicon–glassy dielectric–single silicon, used as a chip in the microelectromechanical systems (MEMS) of tensoresistive pressure transducers, are presented. The interfaces are studied by scanning electron microscopy and atomic-force microscopy (AFM). Possible reasons for the formation of local centers of mechanical stress in the transition regions and at the chip surface are discussed.

This is a preview of subscription content, access via your institution.

References

  1. L. V. Sokolov and V. M. Shkol’nikov, Izmerit. Tekh., No. 10, 27 (2002).

    Google Scholar 

  2. L. V. Sokolov, A. A. Zhukov, and A. V. Kapustyan, in Proceedings of the All-Russia Scientific-Technical Conference on Actual Problems of Rocket-Space Instrumentation and Information Technologies (Fizmatlit, Moscow, 2009), p. 364.

    Google Scholar 

  3. L. V. Sokolov, N. M. Parfenov, and N. A. Agafonova, in Proceedings of the 22nd International Scientific-Technical Seminar on Modern Technologies in Problems of Control, Automatics and Information Processing (Alushta, 2013), p. 262.

    Google Scholar 

  4. L. V. Sokolov, in Proceedings of the 9th International Symposium on Measurement Technology and Intelligent Instruments ISMTII-2009 (St.-Petersburg, 2009), Vol. 3, p. 248.

    Google Scholar 

  5. L. V. Sokolov, in Proceedings of the 6th International SemOI Workshop on Nanoscaled Semiconductor-onInsulator Materials, Sensors and Devices (Kyiv, 2010), p. 91.

    Google Scholar 

  6. L. V. Sokolov, Meas. Tech. 52, 947 (2009).

    Article  Google Scholar 

  7. L. V. Sokolov, N. M. Parfenov, A. A. Zhukov, and A. A. Danilin, Poverkhnost’, No. 9, 56 (2010).

    Google Scholar 

  8. L. V. Sokolov, A. A. Zhukov, N. M. Parfenov, and S. O. Igoshin, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 7, 178 (2013).

    Article  Google Scholar 

  9. N. I. Koshelev, O. Yu. Semenov, and A. I. Ermolaeva, Perspekt. Mater., No. 6, 21 (2000).

    Google Scholar 

  10. L. V. Sokolov, S. P. Timoshenkov, V. V. Kalugin, and N. M. Parfenov, Vestn. Mosk. Aviats. Inst. 19 (1), 128 (2012).

    Google Scholar 

  11. V. S. Vavilov, V. F. Kiselev, and B. N. Mukashev, Defects in the Bulk and at the Surface of Silicon (Nauka, Moscow, 1990) [in Russian].

    Google Scholar 

  12. L. V. Sokolov, S. V. Arkhipov, and V. M. Shkol’nikov, Russ. Microelectron. 32, 151 (2003).

    Article  Google Scholar 

  13. A. Y. Usenko, in Proceedings of the 219th ECS Meeting on Advanced Semiconductor-on-Insulator Technology and Related Physics 15, Ed. by Y. Omura et al., ESC Trans. 35 (5), 111 (2011).

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to L. V. Sokolov.

Additional information

Original Russian Text © L.V. Sokolov, 2016, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2016, No. 2, pp. 86–90.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Sokolov, L.V. Investigation of the interface of insulated silicon tensoresistive Frame-on-Silicon heterostructure for MEMS pressure transducers. J. Synch. Investig. 10, 241–244 (2016). https://doi.org/10.1134/S1027451016010341

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1027451016010341

Keywords

  • heterostructures
  • silicon-on-insulator
  • microelectromechanical systems