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Backscattered electron imaging of microand nanostructures: 4. Structures with a trapezoidal profile and large side-wall inclination angles

Abstract

The results of investigating the imaging of grooves in silicon with a trapezoidal profile and large side-wall inclination angles, which are obtained using a scanning electron microscope operating in the back-scattered-electron collection mode, are presented. Only two among the four known imaging mechanisms is demonstrated to provide contributions to the image-formation process. The lack of contributions from two other mechanisms is explained.

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Correspondence to Yu. A. Novikov.

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Original Russian Text © Yu.A. Novikov, 2016, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2016, No. 2, pp. 66–75.

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Novikov, Y.A. Backscattered electron imaging of microand nanostructures: 4. Structures with a trapezoidal profile and large side-wall inclination angles. J. Synch. Investig. 10, 221–230 (2016). https://doi.org/10.1134/S1027451016010286

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  • DOI: https://doi.org/10.1134/S1027451016010286

Keywords

  • scanning electron microscope
  • backscattered electrons
  • slow secondary electrons
  • imaging mechanisms