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Backscattered electron imaging of microand nanostructures: 4. Structures with a trapezoidal profile and large side-wall inclination angles

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Abstract

The results of investigating the imaging of grooves in silicon with a trapezoidal profile and large side-wall inclination angles, which are obtained using a scanning electron microscope operating in the back-scattered-electron collection mode, are presented. Only two among the four known imaging mechanisms is demonstrated to provide contributions to the image-formation process. The lack of contributions from two other mechanisms is explained.

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Authors and Affiliations

  1. A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, 119991, Russia

    Yu. A. Novikov

  2. National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute), Moscow, 115409, Russia

    Yu. A. Novikov

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  1. Yu. A. Novikov
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Correspondence to Yu. A. Novikov.

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Original Russian Text © Yu.A. Novikov, 2016, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2016, No. 2, pp. 66–75.

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Novikov, Y.A. Backscattered electron imaging of microand nanostructures: 4. Structures with a trapezoidal profile and large side-wall inclination angles. J. Surf. Investig. 10, 221–230 (2016). https://doi.org/10.1134/S1027451016010286

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  • DOI: https://doi.org/10.1134/S1027451016010286

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