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On the processes upon the second-photon-stimulated annealing of InAs layers implanted with Be+ ions

Abstract

The results of the second-photon-stimulated annealing of beryllium-implanted InAs layers are presented. The hole and electron concentrations and the activation energy of second-photon-stimulated annealing are calculated for the characteristic temperature regions using thermopower voltage values measured for the implanted layer. The possible mechanisms of the annealing of radiation-induced defects and the activation of beryllium atoms are discussed.

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Correspondence to A. V. Artamonov.

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Original Russian Text © A.V. Artamonov, V.P. Astakhov, V.V. Karpov, 2016, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2016, No. 1, pp. 44–48.

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Artamonov, A.V., Astakhov, V.P. & Karpov, V.V. On the processes upon the second-photon-stimulated annealing of InAs layers implanted with Be+ ions. J. Synch. Investig. 10, 43–47 (2016). https://doi.org/10.1134/S1027451016010079

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  • DOI: https://doi.org/10.1134/S1027451016010079

Keywords

  • second-photon-stimulated annealing
  • indium arsenide
  • beryllium-ion implantation
  • annealing of radiation-induced defects