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Three-dimensional diffusion of excitons generated by an electron beam in a semiconductor material: Results of mathematical modeling

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Abstract

A mathematical model of three-dimensional exciton-diffusion excited by a narrow electron beam in a semiconductor material is described and studied. It is shown that the obtained model can be used to estimate the exciton-diffusion coefficient in accordance with results of experimental time-of-flight measurements for samples coated with an opaque mask with circular holes. Parameters that are characteristic for GaN are used in the simulation.

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References

  1. A. N. Polyakov, M. Noltemeyer, T. Hempel, J. Christen, and M. A. Stepovich, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 6, 901 (2012).

    Article  Google Scholar 

  2. A. N. Polyakov, M. Noltemeyer, T. Hempel, J. Christen, and M. A. Stepovich, Prikl. Fiz., No. 6, 41 (2012).

    Google Scholar 

  3. A. N. Polyakov, M. Noltemeyer, T. Hempel, J. Christen, and M. A. Stepovich, Bull. Russ. Acad. Sci.: Phys. 76, 970 (2012).

    Article  Google Scholar 

  4. M. Noltemeyer, F. Bertram, T. Hempel, B. Bastek, A. N. Polyakov, J. Christen, M. Brandt, M. Lorenz, and M. Grundmann, J. Mater. Res. 27, 2225 (2012).

    Article  Google Scholar 

  5. H. Hillmer, A. Forchel, S. Hansmann, et al., Phys. Rev. B 39, 10901 (1989).

    Article  Google Scholar 

  6. H. Hillmer, S. Hansmann, A. Forchel, et al., Appl. Phys. Lett. 53, 1937 (1988).

    Article  Google Scholar 

  7. H. Hillmer, A. Forchel, R. Sauer, and C. W. Tu, Phys. Rev. B 42, 3220 (1990).

    Article  Google Scholar 

  8. V. L. Bonch-Bruevich and S. G. Kalashnikov, Physics of Semiconductors (Nauka, Moscow, 1990). [in Russian].

    Google Scholar 

  9. V. I. Petrov, Phys. Usp. 39, 807 (1996).

    Article  Google Scholar 

  10. N. N. Mikheev, I. M. Nikonorov, V. I. Petrov, and M. A. Stepovich, Izv. Akad. Nauk SSSR, Ser. Fiz. 54, 274 (1990).

    Google Scholar 

  11. N. N. Mikheev, V. I. Petrov, and M. A. Stepovich, Izv. Akad. Nauk SSSR, Ser. Fiz. 55, 1474 (1991).

    Google Scholar 

  12. N. N. Mikheev and M. A. Stepovich, Zavod. Lab., Diagn. Mater. 62 (4), 20 (1996).

    Google Scholar 

  13. V. A. Zorich, Mathematical Analysis (Nauka, Moscow, 1981). [in Russian].

    Google Scholar 

  14. V. S. Vladimirov and V. V. Zharinov, Equations of Mathematical Physics, The School-Book, 2nd ed. (Fizmatlit, Moscow, 2004). [in Russian].

    Google Scholar 

  15. I. S. Gradshtein and I. M. Ryzhik, Tables of Integrals, Series and Products (Academic, New York, 2000. Fizmatgiz, Moscow, 1963).

    Google Scholar 

  16. N. N. Lebedev, Special Functions and their Applications, Dover Books on Mathematics(Uchpedgiz, Moscow, 1963. Dover, New York, 1972).

    Google Scholar 

  17. H. M. Shmidt and E. B. Yakimov, Poverkhnost’ 101 (9), 61 (2006).

    Google Scholar 

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Authors and Affiliations

  1. Tsiolkovsky Kaluga State University, Kaluga, 248023, Russia

    A. N. Polyakov & M. A. Stepovich

  2. Plekhanov Russian University of Economics, Ivanovo Branch, Ivanovo, 153025, Russia

    D. V. Turtin

Authors
  1. A. N. Polyakov
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  2. M. A. Stepovich
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  3. D. V. Turtin
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Correspondence to A. N. Polyakov.

Additional information

Original Russian Text © A.N. Polyakov, M.A. Stepovich, D.V. Turtin, 2015, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2015, No. 12, pp. 48–52.

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Polyakov, A.N., Stepovich, M.A. & Turtin, D.V. Three-dimensional diffusion of excitons generated by an electron beam in a semiconductor material: Results of mathematical modeling. J. Surf. Investig. 9, 1251–1255 (2015). https://doi.org/10.1134/S1027451015060361

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  • DOI: https://doi.org/10.1134/S1027451015060361

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