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Interrelation between the impurity states of Si crystals and the dynamic behavior of short surface dislocations

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Abstract

The influence of impurity atmospheres on the mobility and shape of short surface dislocations (with a length of L ≤ 100 μm) in Si crystals is considered in this paper. The difference between the evolution of impurity atmospheres in the vicinity of surface dislocations in the initial Si crystals and in Si crystals with surfaces metallized with Cu is analyzed.

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Authors and Affiliations

  1. Faculty of Physics, Shevchenko Kyiv National University, Kyiv, 01601, Ukraine

    V. A. Makara, L. P. Steblenko, A. N. Kuryliuk, Yu. L. Kobzar & D. V. Kalinichenko

  2. Educational-Scientific Center Physical and Chemical Materials Science, Taras Shevchenko National University of Kyiv, National Academy of Sciences of Ukraine, Kyiv, 01601, Ukraine

    A. N. Krit

Authors
  1. V. A. Makara
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  2. L. P. Steblenko
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  3. A. N. Kuryliuk
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  4. Yu. L. Kobzar
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  5. A. N. Krit
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  6. D. V. Kalinichenko
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Corresponding author

Correspondence to A. N. Kuryliuk.

Additional information

Original Russian Text © V.A. Makara, L.P. Steblenko, A.N. Kuryliuk, Yu.L. Kobzar, A.N. Krit, D.V. Kalinichenko, 2014, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2014, No. 11, pp. 101–105.

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Makara, V.A., Steblenko, L.P., Kuryliuk, A.N. et al. Interrelation between the impurity states of Si crystals and the dynamic behavior of short surface dislocations. J. Surf. Investig. 8, 1182–1185 (2014). https://doi.org/10.1134/S1027451014060093

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  • DOI: https://doi.org/10.1134/S1027451014060093

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