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Investigation of the effect of long-range action by measuring the Kikuchi line width

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Abstract

The variation in Kikuchi line widths upon the illumination of a silicon plate is studied with the help of an electronograph. This work attempts to observe the changes in the defect structure of the subsurface layer of silicon crystal due to the effect of long-range action. The mechanism of this effect is discussed.

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Authors and Affiliations

  1. St. Petersburg State Polytechnical University, St. Petersburg, 195251, Russia

    V. V. Kozlovsky

  2. Physical-Technical Research Institute, Lobachevsky State University, Nizhni Novgorod, 603950, Russia

    V. L. Levshunova, E. A. Pitirimova & D. I. Tetelbaum

  3. Skobeltsyn Institute for Nuclear Physics of Moscow State University, Moscow, 119992, Russia

    G. P. Pokhil

Authors
  1. V. V. Kozlovsky
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  2. V. L. Levshunova
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  3. E. A. Pitirimova
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  4. G. P. Pokhil
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  5. D. I. Tetelbaum
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Corresponding author

Correspondence to V. V. Kozlovsky.

Additional information

Original Russian Text © V.V. Kozlovsky, V.L. Levshunova, E.A. Pitirimova, G.P. Pokhil, D.I. Tetelbaum, 2014, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2014, No. 11, pp. 82–85.

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Kozlovsky, V.V., Levshunova, V.L., Pitirimova, E.A. et al. Investigation of the effect of long-range action by measuring the Kikuchi line width. J. Surf. Investig. 8, 1165–1167 (2014). https://doi.org/10.1134/S1027451014060081

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  • DOI: https://doi.org/10.1134/S1027451014060081

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