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Influence of the high-intensity short-pulse implantation of ions on the properties of polycrystalline silicon

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Abstract

The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2 Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established.

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Authors and Affiliations

  1. Institute of High Technology Physics, National Research Tomsk Polytechnic University, Tomsk, 634050, Russia

    A. V. Kabyshev, F. V. Konusov, G. E. Remnev & S. K. Pavlov

Authors
  1. A. V. Kabyshev
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  2. F. V. Konusov
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  3. G. E. Remnev
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  4. S. K. Pavlov
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Corresponding author

Correspondence to A. V. Kabyshev.

Additional information

Original Russian Text © A.V. Kabyshev, F.V. Konusov, G.E. Remnev, S.K. Pavlov, 2014, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2014, No. 11, pp. 86–92.

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Kabyshev, A.V., Konusov, F.V., Remnev, G.E. et al. Influence of the high-intensity short-pulse implantation of ions on the properties of polycrystalline silicon. J. Surf. Investig. 8, 1168–1173 (2014). https://doi.org/10.1134/S1027451014060068

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  • DOI: https://doi.org/10.1134/S1027451014060068

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