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Analysis of the temperature instability of an InAs/GaAs heterostructure during the process of molecular-beam epitaxy

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Abstract

It is established that, during the process of the molecular-beam epitaxy of InAs on a GaAs substrate, additional absorption of thermal radiation occurs as the film thickness increases, and, as a consequence, the heterostructure temperature becomes higher than the initial temperature in an uncontrolled way. The nonsteady-state mode of film growth leads to structure degradation. Calculation of the heterostructure overheating makes it possible to adjust the substrate temperature during growth.

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References

  1. J. D. Grange, E. H. C. Parker, and R. M. King, J. Phys. D: Appl. Phys. 12, 1601 (1979).

    Article  Google Scholar 

  2. R. A. A. Kubiak, E. H. C. Parker, S. Neustead, and J. J. Harries, Appl. Phys. A 35, 61 (1984).

    Article  Google Scholar 

  3. M. Yano, M. Nogami, Y. Matsushima, and M. Kimata, Jpn. J. Appl. Phys. 16, 2131 (1977).

    Article  Google Scholar 

  4. B. T. Meditt, E. H. C. Parker, R. M. King, and J. D. Grange, J. Cryst. Growth 50, 538 (1980).

    Article  Google Scholar 

  5. C. T. Foxon and B. Joyce, J. Cryst. Growth 44, 75 (1978).

    Article  Google Scholar 

  6. Yu. O. Kanter, A. I. Toropov, A. V. Rzhanov, S. I. Stenin, T. A. Gavrilova, Poverkhnost’, No. 9, 83 (1986).

    Google Scholar 

  7. I. V. Rogozin, Poverkhnost’, No. 8, 78 (2007).

    Google Scholar 

  8. E. M. Voronkova, B. N. Grechushnikov, G. I. Distler, and I. P. Petrov, Optical Materials for Infrared Technology. Reference Book (Nauka, Moscow, 1965), p. 209 [in Russian].

    Google Scholar 

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Authors and Affiliations

  1. Novosibirsk State Technical University, Novosibirsk, 630092, Russia

    A. V. Katsyuba, A. A. Velichko, V. A. Ilyushin & G. F. Sivykh

Authors
  1. A. V. Katsyuba
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  2. A. A. Velichko
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  3. V. A. Ilyushin
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  4. G. F. Sivykh
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Corresponding author

Correspondence to A. V. Katsyuba.

Additional information

Original Russian Text © A.V. Katsyuba, A.A. Velichko, V.A. Ilyushin, G.F. Sivykh, 2014, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2014, No. 7, pp. 70–73.

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Katsyuba, A.V., Velichko, A.A., Ilyushin, V.A. et al. Analysis of the temperature instability of an InAs/GaAs heterostructure during the process of molecular-beam epitaxy. J. Surf. Investig. 8, 686–688 (2014). https://doi.org/10.1134/S1027451014040077

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  • DOI: https://doi.org/10.1134/S1027451014040077

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