Advertisement

Different coloration of the nanostructured silicon surface upon plasma-assisted etching

  • A. A. ZalutskayaEmail author
  • A. V. Prokaznikov
Article
  • 37 Downloads

Abstract

The effects of changes in the color of silicon plates with nanostructured surfaces versus the features of nanostructures are investigated. Vertical nanostructures with high aspect ratios are constructed via anisotropic two-stage plasma-assisted etching (Bosch process). The surface coloration is explained by the fact that incident radiation is partly trapped by waveguide edge modes and its remaining part is scattered at the surface. The surface-film color is related to the positive and negative curvature of the nanostructures formed as a result of the plasma-assisted process.

Keywords

Surface Investigation Neutron Technique Waveguide Mode Edge Mode Silicon Plate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    C. V. Tikhov, I. A. Karpovich, and V. G. Testov, J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech. 7, 27 (2013).CrossRefGoogle Scholar
  2. 2.
    T. V. Panova and V. S. Kovivchak, J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech. 6, 241 (2012).CrossRefGoogle Scholar
  3. 3.
    T. E. Sukhanova, P. G. Ul’yanov, G. G. Vladimirov, S. I. Fedoseenko, V. K. Adamchuk, S. V. Valueva, A. Ya. Volkov, N. A. Matveeva, and L. N. Borovikova, J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech. 5, 440 (2011).CrossRefGoogle Scholar
  4. 4.
    S. Bozhevolnyi, Plasmonics. Nanoguides and Circuits (Pan Stanford, Singapore, 2009).Google Scholar
  5. 5.
    S. A. Maier, Plasmonics: Fundamental and Application (Springer, New York, 2007).Google Scholar
  6. 6.
    K. W. Seo, M. Wober, and P. Steinvurze, Nano Lett. 11, 1851 (2011).CrossRefGoogle Scholar
  7. 7.
    S. S. Walavalkar, A. P. Homyk, and C. E. Hofmann, Appl. Phys. Lett. 98, 153114 (2011).CrossRefGoogle Scholar
  8. 8.
    L. Dobrzynsky and A. A. Maradudin, Phys. Rev. B 6, 3810 (1972).CrossRefGoogle Scholar
  9. 9.
    A. Equiluz and A. A. Maradudin, Phys. Rev. B 14, 5526 (1976).CrossRefGoogle Scholar
  10. 10.
    L. C. Davis, Phys. Rev. B 14, 5523 (1976).CrossRefGoogle Scholar
  11. 11.
    A. D. Boardman, G. C. Aers, and R. Teshima, Phys. Rev. B 24, 5703 (1981).CrossRefGoogle Scholar
  12. 12.
    D. E. Chang, A. S. Sorensen, and P. R. Hemmer, Phys. Rev. B 76, 035420 (2007).CrossRefGoogle Scholar
  13. 13.
    F. Laermer and A. Schilp, US Patent No. 5501893 (1996).Google Scholar
  14. 14.
    F. Laermer and A. Schilp, US Patent No. 6531068 B2 (2003).Google Scholar
  15. 15.
    A. S. Davydov, Theory of Solid State (Nauka, Moscow, 1976) [in Russian].Google Scholar
  16. 16.
    A. N. Tikhonov and A. A. Samarskii, Equations of Mathematical Physics (Nauka, Moscow, 1977) [in Russian].Google Scholar
  17. 17.
    G. N. Watson, A Treatise on the Theory of Bessel Functions (Cambridge Univ., Cambridge, 1944; Inostr. Liter., Moscow, 1949), p. 798.Google Scholar
  18. 18.
    V. Abramowitz and I. A. Stegun, Handbook of Mathematical Functions, Nat. Bur. Stds. Appl. Math. Ser., Vol. 55 (U.S. GPO, Washngton, D.C., 1972), p. 686.Google Scholar
  19. 19.
    P. Longe and S. M. Bose, Phys. Rev. B 48, 18239 (1993).CrossRefGoogle Scholar
  20. 20.
    O. Sato, Y. Tanaka, and M. Kobayashi, Phys. Rev. B 48, 1947 (1993).CrossRefGoogle Scholar
  21. 21.
    V. A. Koval’skii, Extended Abstract of Candidate’s Dissertation in Physics and Mathematics (Inst. Solid State Phys. RAS, Chernogolovka, 2007).Google Scholar
  22. 22.
    A. V. Pogorelov, Differential Geometry (Nauka, Moscow, 1974) [in Russian].Google Scholar
  23. 23.
    L. Novotny and B. Hecht, Principles of Nano-Optics (Cambridge Univ. Press, Cambridge, 2006; Fizmatlit, Moscow, 2011).CrossRefGoogle Scholar
  24. 24.
    P. K. Kashkarov and V. Yu. Timoshenko, Optics of Solid State and Systems of Reduced Dimensions (Pul’s, Moscow, 2008) [in Russian].Google Scholar
  25. 25.
    V. M. Grabov and N. P. Stepanov, Semiconductors 35, 149 (2001).CrossRefGoogle Scholar
  26. 26.
    L. A. Golovan’, V. Yu. Timoshenko, and P. K. Kashkarov, Phys. Usp. 50, 595 (2007).CrossRefGoogle Scholar
  27. 27.
    S. Zhou, N. Janel, and G. C. J. Schatz, Chem. Phys. 120, 10871 (2004).CrossRefGoogle Scholar
  28. 28.
    I. I. Amirov, E. N. Zhikharev, and V. A. Kalnov, in Proceedings of the International Conference on Modern Problems in Physics of Surfaces and Nanostructures (YB IPT RAS, Yaroslavl, Russia, 2010), p. O3–4.Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  1. 1.Yaroslavl State UniversityYaroslavlRussia
  2. 2.Yaroslavl Branch of the Institute of Physics and TechnologyInstitution of Russian Academy of SciencesYaroslavlRussia

Personalised recommendations