Abstract
We demonstrate the formation of a modified triangular network of Shockley edge partial misfit dislocations at a plastic-relaxation level of ρ = 0.72 of 3D Ge(111) islands grown on a wetting layer. The network forms due to the offset of one dislocation family by 40% of the interdislocation spacing. We report ultra-high-vacuum scanning tunnel microscopy and high-resolution transmission electron microscopy data and the results of theoretical calculation of the stress fields induced in the film volume by the introduction of misfit dislocations. We establish the Ge-film-thickness range acceptable for observing elastic undulation of the surface by scanning tunneling microscopy.
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Original Russian Text © A.S. Ilin, E.M. Trukhanov, S.A. Teys, A.K. Gutakovskii, 2014, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2014, No. 8, pp. 58–64.
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Ilin, A.S., Trukhanov, E.M., Teys, S.A. et al. Analysis of the dislocation structure at the Ge/Si(111) heterointerface. J. Surf. Investig. 8, 787–793 (2014). https://doi.org/10.1134/S1027451014030069
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DOI: https://doi.org/10.1134/S1027451014030069