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Studying stacking faults in SiC by the XBIC method using a laboratory X-ray source

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Abstract

Using the X-ray-beam-induced current (XBIC) method, stacking faults in hexagonal silicon carbide 4H-SiC are studied. It is shown that the XBIC method using a laboratory source makes it possible to reveal extended defects in samples with a submicron diffusion length and anomalous bright contrast. The fault contrast is measured and compared with the contrast obtained in the electron-beam-induced current (EBIC) method. Discussion of the obtained results is presented.

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    M. V. Grigoriev, D. V. Roshchupkin, R. R. Fakhrtdinov & E. B. Yakimov

Authors
  1. M. V. Grigoriev
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  2. D. V. Roshchupkin
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  3. R. R. Fakhrtdinov
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  4. E. B. Yakimov
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Corresponding author

Correspondence to R. R. Fakhrtdinov.

Additional information

Original Russian Text © M.V. Grigoriev, D.V. Roshchupkin, R.R. Fakhrtdinov, E.B. Yakimov, 2014, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2014, No. 2, pp. 65–67.

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Grigoriev, M.V., Roshchupkin, D.V., Fakhrtdinov, R.R. et al. Studying stacking faults in SiC by the XBIC method using a laboratory X-ray source. J. Surf. Investig. 8, 155–157 (2014). https://doi.org/10.1134/S1027451014010340

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  • DOI: https://doi.org/10.1134/S1027451014010340

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