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Abstract

Various negatron effects in films of alloys of II–VI compounds deposited from solutions as a function of the deposition mode and heat treatment are studied. It is found that the negative photocapacitance effect, which was first discovered in ZnS1−x Se x films, and the slowly relaxing negative photoelectric effects, which are caused by the transition of electrons located in a nanoscale surface layer from the shallow energy levels of trapping centers to deeper levels with a lower polarizability and by the presence of nanoscale clusters in these materials, which play the role of a “reservoir” for minority charge carriers, occur according to a single mechanism. A model to explain the basic laws of negative photoconductivity in CdSe1 − x Te x films deposited from a solution is proposed. Negative residual conductivity is explained in terms of double-barrier relief model, while negative differential photoconductivity is attributed to the presence of nanoscale electric domains.

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Original Russian Text © M.A. Jafarov, E.F. Nasirov, S.A. Mamedova, R.F. Mekhtiev, 2014, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2014, No. 2, pp. 40–46.

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Jafarov, M.A., Nasirov, E.F., Mamedova, S.A. et al. Negatron effects in CdSe1 − x Te x and ZnS1−x Se x films. J. Surf. Investig. 8, 131–137 (2014). https://doi.org/10.1134/S102745101306027X

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  • DOI: https://doi.org/10.1134/S102745101306027X

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