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Synthesis and structure of Mg(Fe0.8Ga0.2)2O4−δ film materials

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Abstract

Features of the preparation of magnetic semiconductor films with the composition Mg(Fe0.8Ga0.2)2O4−δ on a 200-nm-thick silicon substrate are presented. Both a pure substrate surface and one with protective TiO x layers with a crystallization temperature of 900–1000°C for 30 min were used. The effect of the protective layers on the formation of the surface morphology of the films and their magnetic properties is shown.

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Authors and Affiliations

  1. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, 119991, Russia

    A. A. Geras’kin & V. A. Ketsko

  2. Moscow State Technical University of Radio-Engineering, Electronics, and Automation, Moscow, Russia

    A. A. Geras’kin, O. L. Golikova & A. V. Bespalov

Authors
  1. A. A. Geras’kin
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  2. O. L. Golikova
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  3. A. V. Bespalov
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  4. V. A. Ketsko
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Corresponding author

Correspondence to O. L. Golikova.

Additional information

Original Russian Text © A.A. Geras’kin, O.L. Golikova, A.V. Bespalov, V.A. Ketsko, 2013, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2013, No. 9, pp. 87–90.

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Geras’kin, A.A., Golikova, O.L., Bespalov, A.V. et al. Synthesis and structure of Mg(Fe0.8Ga0.2)2O4−δ film materials. J. Surf. Investig. 7, 892–895 (2013). https://doi.org/10.1134/S1027451013040101

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  • DOI: https://doi.org/10.1134/S1027451013040101

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