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Superstructure formation in epitaxial TlGa1 − x Ge x Te2 films

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Abstract

The phase transformations in TlGa1 − x Ge x Te2 films 30 nm thick are studied by the electron diffraction method. It is revealed that the interaction of the triple compound TlGaTe with Ge results in the formation of solid solutions of replacement in the composition range (0.02 ≤ x ≤ 0.09). A superstructure with a tetragonal syngony, possessing doubled lattice parameters in relation to the initial phase, is observed in epitaxial films of the ternary compound.

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Authors and Affiliations

  1. Baku State University, Baku, Azerbaijan

    E. Sh. Alekperov & A. K. Sharifova

Authors
  1. E. Sh. Alekperov
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  2. A. K. Sharifova
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Correspondence to E. Sh. Alekperov.

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Original Russian Text © E.Sh. Alekperov, A.K. Sharifova, 2013, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2013, No. 7, pp. 92–95.

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Alekperov, E.S., Sharifova, A.K. Superstructure formation in epitaxial TlGa1 − x Ge x Te2 films. J. Surf. Investig. 7, 687–690 (2013). https://doi.org/10.1134/S1027451013040046

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  • DOI: https://doi.org/10.1134/S1027451013040046

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