Abstract
It is shown that local tunneling breakdown causes selective etching of the surface of a semiconductor electrode. It is shown that the effect of the axially directed etching of micropores in heavily doped semiconductors stops at an anode voltage, when the depletion layer of the inner end face of the pore becomes equal to the depletion layer of the planar surface. In lightly doped semiconductors, lateral etching of pore boundaries is controlled by the initiation of cascade ionization during avalanche breakdown.
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References
Yu. M. Spivak and V. A. Moshnikov, J. Surf. Invest. 4, 71 (2010).
D. V. Irzhak, D. V. Roshchupkin, V. V. Starkov, and R. R. Fakhrtdinov, J. Surf. Invest. 4, 947 (2010).
X. G. Zhang, S. D. Sollins, and R. L. Smith, J. Electrochem. Soc. 136, 1561 (1989).
X. G. Zhang, J. Electrochem. Soc. 138, 3750 (1991).
S. I. Soloviev and T. S. Sudarshan, Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis and Biotechnology Applications (Wiley, England, 2008), p. 324.
S. Sze, Physics of Semiconductor Devices (Wiley Intersci., New York, 1981; Mir, Moscow, 1984).
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Original Russian Text © L.G. Linets, D.I. Cherednichenko, 2013, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2013, No. 6, pp. 51–54.
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Linets, L.G., Cherednichenko, D.I. Micropore formation by the electrochemical etching of a semiconductor surface under local electrical-breakdown conditions. J. Surf. Investig. 7, 547–550 (2013). https://doi.org/10.1134/S1027451013030282
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DOI: https://doi.org/10.1134/S1027451013030282