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Application of a scanning electron microscope in simulating a beta-emission-induced current

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Abstract

The current induced by emission from a thin 63Ni layer is simulated with allowance for the real spectrum of ejected electrons and their angular distribution in Si and GaN. The calculated results are compared with simulation data obtained for a monoenergetic electron beam perpendicular to the semiconductor detector. For both Si and GaN, the ratio between the currents induced by the SEM beam and β emission from 63Ni is demonstrated to be almost completely independent of the diffusion length, if the electron-beam energy of a scanning electron microscope (SEM) is appropriately selected.

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Authors and Affiliations

  1. National Research Centre Kurchatov Institute, Moscow, Russia

    M. A. Polikarpov

  2. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, Russia

    E. B. Yakimov

Authors
  1. M. A. Polikarpov
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  2. E. B. Yakimov
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Additional information

Original Russian Text © M.A. Polikarpov, E.B. Yakimov, 2013, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2013, No. 1, pp. 85–88.

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Polikarpov, M.A., Yakimov, E.B. Application of a scanning electron microscope in simulating a beta-emission-induced current. J. Surf. Investig. 7, 81–84 (2013). https://doi.org/10.1134/S1027451013010163

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  • DOI: https://doi.org/10.1134/S1027451013010163

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