Abstract
Investigations of the sputtering of films of the Pb1 − x Sn x Te ternary solid solution with 0 ≤ x ≤ 1 in RF high-density low-pressure inductively coupled argon plasma have been performed. The effect of a constant sputtering rate with variation in the composition of the semiconductor solid solution for (111)-oriented films with x < 0.6 and of a sputtering rate decrease with the appearance of (100)-oriented crystallites at x > 0.6 is found. The results are analyzed in the context of a model of ternary alloy sputtering based on the Sigmund solid sputtering theory when taking into account the sublimation energies of binary compounds that constitute a solid solution.
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Original Russian Text © I.I. Amirov, S.P. Zimin, E.S. Gorlachev, V.V. Naumov, E. Abramof, P.H.O. Rappl, 2012, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2012, No. 8, pp. 17–20.
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Amirov, I.I., Zimin, S.P., Gorlachev, E.S. et al. Investigations of the inductively coupled argon plasma sputtering of Pb1 − x Sn x Te ternary solid solution. J. Surf. Investig. 6, 643–646 (2012). https://doi.org/10.1134/S102745101208006X
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DOI: https://doi.org/10.1134/S102745101208006X