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Photoluminescence kinetics of structures with InAs quantum dots for IR photodetectors

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Abstract

The experimental results of a photoluminescence kinetics study of InAs/GaAs structures with quantum dots grown by metal-organic vapor-phase epitaxy are shown. The measurements have revealed the fast capture of excited carriers from the GaAs barrier to quantum dots and slow interlevel relaxation inside the quantum dots.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    L. V. Gavrilenko, V. M. Danil’tsev, M. N. Drozdov, D. I. Kuritsyn & L. D. Moldavskaya

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  1. L. V. Gavrilenko
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  2. V. M. Danil’tsev
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  3. M. N. Drozdov
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  4. D. I. Kuritsyn
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  5. L. D. Moldavskaya
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Correspondence to L. V. Gavrilenko.

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Original Russian Text © L.V. Gavrilenko, V.M. Danil’tsev, M.N. Drozdov, D.I. Kuritsyn, L.D. Moldavskaya, 2012, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2012, No. 6, pp. 47–50.

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Gavrilenko, L.V., Danil’tsev, V.M., Drozdov, M.N. et al. Photoluminescence kinetics of structures with InAs quantum dots for IR photodetectors. J. Surf. Investig. 6, 505–507 (2012). https://doi.org/10.1134/S1027451012060110

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  • DOI: https://doi.org/10.1134/S1027451012060110

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