Skip to main content
SpringerLink
Log in

Diagnostics of height distribution of InAs/GaAs quantum dot arrays by means of carbon tetrachloride treatment in vapor phase epitaxy conditions

  • Published:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques Aims and scope Submit manuscript

Abstract

A technique for determination of InAs quantum dots bimodal distribution has been developed. This technique is based on vapor-chemical etching of quantum dot arrays coated with thin GaAs layers and on combined investigation of the morphology and photoluminescence spectra of etched quantum-size structures. It has been shown that, in some growth modes of quantum-size heterostructures by metal-organic vapor phase epitaxy, bimodal arrays of large and small quantum dots are formed. The surface concentration of large and small dots has been established to be about 2 × 109 and 3 × 1010 cm−2, respectively.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. Chahboun, M. I. Vasilevskiy, N. V. Baidus, et al., J. Appl. Phys. 013, 083548 (2008).

    Article  Google Scholar 

  2. V. A. Kul’bachinskii, V. A. Rogozin, R. A. Lunin, et al., Fiz. Tekh. Poluprovodn. 39, 1354 (2005) [Semiconductors 39, 1308 (2005)].

    Google Scholar 

  3. A. V. Zdoroveishchev, P. B. Demina, and B. N. Zvonkov, Vestn. Nizhegor. Univ., No. 5, 19 (2008).

  4. A. A. Biryukov, B. N. Zvonkov, E. A. Uskova, et al., in Nanophotonics-2001, Proc. of the Workshop, N. Novgorod, 26–29 March, 2001 (NNovg. Gos. Univ., Nizh. Novgorod, 2001), p. 98.

    Google Scholar 

  5. N. V. Baidus, A. A. Biryukov, B. N. Zvonkov, et al., Izv. Akad. Nauk, Ser. Fiz. 67, 208 (2003).

    CAS  Google Scholar 

  6. I. A. Karpovich, A. V. Zdoroveishev, B. N. Zvonkov, et al., Phys. Low-Dim. Struct. 3–4, 191 (2003).

    Google Scholar 

  7. I. A. Karpovich, B. N. Zvonkov, and S. B. Levichev, Fiz. Tekh. Poluprovodn. 38, 448 (2004) [Semiconductors 38, 431 (2004)].

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Nizhni Novgorod State University, pr. Gagarina 23, Nizhni Novgorod, 603950, Russia

    A. V. Zdoroveishev, P. B. Demina & I. A. Karpovich

  2. Physics of Solid State Nanostructures Research and Education Center, Nizhni Novgorod State University, pr. Gagarina 23, Nizhni Novgorod, 603950, Russia

    A. V. Zdoroveishev & I. A. Karpovich

  3. Research Physicotechnical Institute, Nizhni Novgorod State University, pr. Gagarina 23 korp. 3, Nizhni Novgorod, 603950, Russia

    A. V. Zdoroveishev & P. B. Demina

Authors
  1. A. V. Zdoroveishev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. P. B. Demina
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. I. A. Karpovich
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. V. Zdoroveishev.

Additional information

Original Russian Text © A.V. Zdoroveishev, P.B. Demina, I.A. Karpovich, 2011, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 1, pp. 62–65.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zdoroveishev, A.V., Demina, P.B. & Karpovich, I.A. Diagnostics of height distribution of InAs/GaAs quantum dot arrays by means of carbon tetrachloride treatment in vapor phase epitaxy conditions. J. Surf. Investig. 5, 57–59 (2011). https://doi.org/10.1134/S1027451011010204

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1027451011010204

Keywords

Search

Navigation