Scanning helium ion microscope: Distribution of secondary electrons and ion channeling
The principles and features of operation of a scanning helium microscope are reviewed briefly. The measurement data on the energy distribution of secondary electrons excited by the ion beam in an Au film and on the angular dependence of the backscattered ion yield are obtained and presented for the first time. The effect of ion channeling in silicon single crystal with the (110) orientation is demonstrated.
KeywordsSecondary Electron Surface Investigation Neutron Technique Electron Cascade Slight Relief
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