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SIMS diagnostics of the structure of nanometer-sized semiconducting layers doped with impurities

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Abstract

The possibility of analyzing the structure of nanometer-sized silicon layers doped with boron and antimony (at a concentration level of 10−2–10−3 at %) via secondary-ion mass spectrometry (SIMS) is investigated. A recoil-atom implantation process has been evaluated from the standpoint of its contribution into the total recorded signal of secondary ions of impurities. It is demonstrated that SIMS can be used for qualitative determination of the structure formed in doped δ-layers.

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References

  1. A. N. Pustovit, in Proc. of the 16th Intern. Conf. on Interaction of Ions with Surface VIP-2003, Zvenigorod (ITTs MATI, Moscow, 2003), Vol. 1, p. 397.

    Google Scholar 

  2. A. N. Pustovit, Izv. Akad. Nauk, Ser. Fiz. 68, 397 (2004).

    CAS  Google Scholar 

  3. A. N. Pustovit and A. F. Vyatkin, SIMS XI (Wiley, Chichester, 1997), p. 281.

    Google Scholar 

  4. CirLin Eun-Hee, John J. Vigo, and T. C. Hasenberg, J. Vac. Sci. Technol. B 12, 269 (1994).

    Google Scholar 

  5. J. Cardenas and B. G. Svensson, SIMS XI (Wiley, Chichester, 1997), p. 335.

    Google Scholar 

  6. K. Wittmack, in Sputtering by Particle Bombardment III, Ed. by R. Behrisch and K. Wittmaack, Springer Ser. in Appl. Phys., Vol 64 (Springer, Berlin, Heidelberg, 1991; Mir, Moscow, 1998), p. 237.

    Google Scholar 

  7. V. K. Smirnov, in Proc. of the 13th Intern. Conf. on Interaction of Ions with Surface VIP-1997, Zvenigorod (ITTs MATI, Moscow, 1997), Vol. 1, p. 42.

    Google Scholar 

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, Russia

    A. N. Pustovit

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  1. A. N. Pustovit
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Original Russian Text © A.N. Pustovit, 2010, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 9, pp. 101–104.

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Pustovit, A.N. SIMS diagnostics of the structure of nanometer-sized semiconducting layers doped with impurities. J. Surf. Investig. 4, 784–787 (2010). https://doi.org/10.1134/S1027451010050162

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  • DOI: https://doi.org/10.1134/S1027451010050162

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