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On applicability of confluence analysis in cathodoluminescence microscopy for interval estimation of diffusion lengths of minority carriers and depths of subsurface regions with depletion of majority carriers

  • Proceedings of XXII Russian Conference on Electron Microscopy (Scintific Council of RAS on Electron Microscopy, Institute of Microelectronics Technology and High Purity Materials of RAS, Shubnikov Institute of Crystallography RAS, Chernogolovka, June 2008,
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Abstract

Mathematical modeling is applied to examine the possibilities for obtaining point and interval simultaneous estimates for two parameters of a semiconducting material, these being the diffusion length of minority carriers and the depth of subsurface regions with depletion of majority carriers. For the first time in cathodoluminescence microscopy, the method of confluence analysis has been employed to tackle the twodimensional inverse problem in question. Our calculations involved the parameters characteristic of real direct band-gap semiconducting materials.

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Authors and Affiliations

  1. Research Center for Space Materials Science, Shubnikov Institute of Crystallography, Russian Academy of Sciences, Akademicheskaya ul. 8, Kaluga, 248640, Russia

    N. N. Mikheev

  2. Tsiolkovsky State Pedagogical University, ul. Stepana Razina 26, Kaluga, 248023, Russia

    A. N. Polyakov & M. A. Stepovich

Authors
  1. N. N. Mikheev
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  2. A. N. Polyakov
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  3. M. A. Stepovich
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Correspondence to A. N. Polyakov.

Additional information

Original Russian Text © N.N. Mikheev, A.N. Polyakov, M.A. Stepovich, 2009, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 10, pp. 87–92.

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Mikheev, N.N., Polyakov, A.N. & Stepovich, M.A. On applicability of confluence analysis in cathodoluminescence microscopy for interval estimation of diffusion lengths of minority carriers and depths of subsurface regions with depletion of majority carriers. J. Surf. Investig. 3, 820–825 (2009). https://doi.org/10.1134/S1027451009050267

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  • DOI: https://doi.org/10.1134/S1027451009050267

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