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On the possibilities of implementing a stochastic model for the distribution of nonequilibrium minority charge carriers in a semiconductor material

  • Proceedings of XXII Russian Conference on Electron Microscopy (Scintific Council of RAS on Electron Microscopy, Institute of Microelectronics Technology and High Purity Materials of RAS, Shubnikov Institute of Crystallography RAS, Chernogolovka, June 2008,
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Abstract

Some possibilities of implementing a procedure for estimating statistical characteristics (expectation and autocorrelation function) of the distribution of minority charge carriers (MCCs) generated in a homogeneous semiconductor material are studied. The developed procedure is based on the projection method and the matrix operator technique. It is assumed that the electrophysical parameters of the material (lifetime, diffusion coefficient, and surface recombination rate of MCCs) are random quantities (variables) and obey the Gaussian distribution law. The effect of the variance of these quantities on the depth distribution of MCCs is considered. Some possibilities of this method are illustrated for the case of MCC excitation by a broad beam of electrons with moderate energies.

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Authors and Affiliations

  1. Kaluga Branch of the Bauman Moscow State Technical University, Kaluga, 248600, Russia

    E. V. Seregina & A. M. Makarenkov

  2. Tsiolkovskii Kaluga State Pedagogical University, Kaluga, 248023, Russia

    M. A. Stepovich

Authors
  1. E. V. Seregina
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  2. A. M. Makarenkov
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  3. M. A. Stepovich
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Correspondence to A. M. Makarenkov.

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Original Russian Text © E.V. Seregina, A.M. Makarenkov, M.A. Stepovich, 2009, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 10, pp. 75–86.

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Seregina, E.V., Makarenkov, A.M. & Stepovich, M.A. On the possibilities of implementing a stochastic model for the distribution of nonequilibrium minority charge carriers in a semiconductor material. J. Surf. Investig. 3, 809–819 (2009). https://doi.org/10.1134/S1027451009050255

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  • DOI: https://doi.org/10.1134/S1027451009050255

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