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Phenomenological model of the diffusion of impurity atoms in ultrathin silicon layers with a nonuniform distribution of temperatures


The influence of fluxes of intrinsic nonequilibrium semiconductor defects on impurity diffusion in a nonuniform temperature field is considered in the framework of the phenomenological theory of irreversible processes. The mass transfer coefficient defined as the ratio of the concentrations of nonequilibrium and equilibrium defects is introduced to take the excessive concentration of nonequilibrium defects into account. The introduction of this coefficient into equations for matter and heat fluxes makes it possible to express the parameters of the process of thermal diffusion (the diffusion coefficient and the heat of transport) as a time-dependent function of the excessive concentration of intrinsic nonequilibrium semiconductor defects.

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Correspondence to V. V. Ovcharov.

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Original Russian Text © V.V. Ovcharov, V.I. Rudakov, 2009, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 8, pp. 76–80.

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Ovcharov, V.V., Rudakov, V.I. Phenomenological model of the diffusion of impurity atoms in ultrathin silicon layers with a nonuniform distribution of temperatures. J. Synch. Investig. 3, 639–643 (2009).

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  • Surface Investigation
  • Effective Diffusion
  • Neutron Technique
  • Impurity Atom
  • Intrinsic Defect