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Fast electron generation under proton interaction with a silicon surface

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Abstract

The computational procedure for a number of fast electrons generated by ion impact with a surface is proposed. The ionization of 2s and 2p atomic shells is shown to be the main source of fast electrons under proton interaction with a silicon surface. The number of fast electrons does not depend on the angle of ion incidence on a surface with a small number of reflected ions.

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Authors and Affiliations

  1. Skobeltsyn Research Institute of Nuclear Physics, Moscow State University, Moscow, 1119991, Russia

    N. V. Novikov

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  1. N. V. Novikov
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Original Russian Text © N.V. Novikov, 2009, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 1, pp. 74–77.

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Novikov, N.V. Fast electron generation under proton interaction with a silicon surface. J. Surf. Investig. 3, 61–64 (2009). https://doi.org/10.1134/S102745100901011X

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  • DOI: https://doi.org/10.1134/S102745100901011X

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