Abstract
The width of dislocation EBIC images in GaN films and GaN based light-emitting structures has been measured. The obtained data have been compared with the diffusion length and the depth of the space charge region boundary and a correlation between these values has been found. It has been shown that the dislocation image’s width in semiconductors with the submicron diffusion length could be used for the estimation of diffusion length values.
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Original Russian Text © P.S. Vergeles, E.B. Yakimov, 2009, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 1, pp. 71–73.
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Vergeles, P.S., Yakimov, E.B. Study of dislocation EBIC image width in GaN films and GaN based structures. J. Surf. Investig. 3, 58–60 (2009). https://doi.org/10.1134/S1027451009010108
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DOI: https://doi.org/10.1134/S1027451009010108