Abstract
The effect of partial recovery of zinc surface at room temperature after basal plane indentation was detected and studied with a scanning tunneling microscope. It was found that indentation depth recovery depending on time occurs in one stage and recovery of lateral sizes in two stages with different activation energies, which are less than that of bulk zinc self-diffusion. Possible mechanisms of surface self-diffusion of zinc atoms leading to surface crystal growth were discussed. It was shown that the dynamics of effects observed on the sample surface in the indentation area after 15-min annealing at 100°C is associated with emergence of thermally generated vacancies from the sample bulk.
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Original Russian Text © P.V. Kuznetsov, I.V. Petrakova, N.P. Beketov, 2008, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 9, pp. 79–87.
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Kuznetsov, P.V., Petrakova, I.V. & Beketov, N.P. Effect of partial recovery of zinc surface at room temperature after basal plane indentation. J. Surf. Investig. 2, 751–758 (2008). https://doi.org/10.1134/S1027451008050157
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DOI: https://doi.org/10.1134/S1027451008050157