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EBIC investigations of GaN layers prepared by epitaxial lateral overgrowth

  • XV Russian Symposium on Scanning Electron Microscopy and Analytical Methods of Investigation of Solids (REM-2007)
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Abstract

GaN films prepared by lateral overgrowth are investigated by scanning electron microscopy in the electron beam induced current (EBIC) mode. A comparison of experimental and simulated dependences of induced current on beam energy has allowed us to determine not only the diffusion length, but also the donor concentration in different areas of a film. It has been found that the donor distribution is inhomogeneous and this inhomogeneity increases under fast neutron irradiation. This is indicative of the significant influence of structural defects on the rate of radiation defect accumulation. An anomalously slow signal decay outside the Schottky barrier has been found, which can be determined by charged defects formed at the merger boundary.

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, Chernogolovka, Moscow oblast, 142432, Russia

    P. S. Vergeles & E. B. Yakimov

  2. FSUE Giredmet, Moscow, Russia

    A. V. Govorkov, A. Ya. Polyakov & N. B. Smirnov

Authors
  1. P. S. Vergeles
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  2. A. V. Govorkov
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  3. A. Ya. Polyakov
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  4. N. B. Smirnov
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  5. E. B. Yakimov
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Additional information

Original Russian Text © P.S. Vergeles, A.V. Govorkov, A.Ya. Polyakov, N.B. Smirnov, E.B. Yakimov, 2008, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 9, pp. 14–17.

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Vergeles, P.S., Govorkov, A.V., Polyakov, A.Y. et al. EBIC investigations of GaN layers prepared by epitaxial lateral overgrowth. J. Surf. Investig. 2, 688–691 (2008). https://doi.org/10.1134/S1027451008050030

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  • DOI: https://doi.org/10.1134/S1027451008050030

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