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Surface morphology of a Si(310) substrate used for molecular beam epitaxy of CdHgTe: II. Si(310) surface annealed in As4 vapors

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Abstract

The morphology of a hydrogenated Si(310) surface annealed in As4 vapors is studied by fast electron diffraction and scanning tunneling microscopy. It is established that, at annealing temperatures above 700°C, the surface morphology is changed; namely, (311) facets and steps with heights equal to several interplanar distances are formed. At temperatures below 600°C, there is no surface faceting and the height of steps is equal to two interplanar distances. This makes this surface suitable for growing A2B6-based heterostructures.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    M. V. Yakushev, D. V. Brunev, K. N. Romanyuk & Yu. G. Sidorov

Authors
  1. M. V. Yakushev
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  2. D. V. Brunev
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  3. K. N. Romanyuk
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  4. Yu. G. Sidorov
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Correspondence to M. V. Yakushev.

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Original Russian Text © M.V. Yakushev, D.V. Brunev, K.N. Romanyuk, Yu.G. Sidorov, 2008, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 6, pp. 14–20.

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Yakushev, M.V., Brunev, D.V., Romanyuk, K.N. et al. Surface morphology of a Si(310) substrate used for molecular beam epitaxy of CdHgTe: II. Si(310) surface annealed in As4 vapors. J. Surf. Investig. 2, 433–439 (2008). https://doi.org/10.1134/S1027451008030208

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  • DOI: https://doi.org/10.1134/S1027451008030208

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