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Formation of concentration profiles of implanted ions in metallic materials under polyenergetic implantation

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Abstract

A physical and mathematical model of mass transfer in polycrystalline metallic materials under exposure to ion beams is proposed. Alongside bulk indiffusion from the irradiated surface, diffusion along the migrating extensive defects interacting with an impurity is considered. For a polyenergetic ion beam, the contribution of bulk indiffusion is presented as an integral over energy of the product of two functions; one of them describes the energy distribution of ions in a beam and the second represents the implantation profile of monoenergetic ion beam.

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Authors and Affiliations

  1. Omsk State University, pr. Mira 55-a, Omsk, 644077, Russia

    T. V. Vakhnii, G. A. Vershinin & T. S. Grekova

  2. Institute of Strength Physics and Materials Science, Siberian Branch, Russian Academy of Sciences, Tomsk, Russia

    I. A. Bozhko, I. A. Kurzina & Yu. P. Sharkeev

Authors
  1. T. V. Vakhnii
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  2. G. A. Vershinin
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  3. I. A. Bozhko
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  4. I. A. Kurzina
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  5. Yu. P. Sharkeev
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  6. T. S. Grekova
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Additional information

Original Russian Text © T.V. Vakhnii, G.A. Vershinin, I.A. Bozhko, I.A. Kurzina, Yu.P. Sharkeev, T.S. Grekova, 2008, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 4, pp. 51–54.

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Vakhnii, T.V., Vershinin, G.A., Bozhko, I.A. et al. Formation of concentration profiles of implanted ions in metallic materials under polyenergetic implantation. J. Surf. Investig. 2, 301–304 (2008). https://doi.org/10.1134/S1027451008020262

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  • DOI: https://doi.org/10.1134/S1027451008020262

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