Abstract
The results of analytical estimations and computer simulation of a radiation damage level dpa are presented and discussed taking into account the material sputtering under ion bombardment. It is shown that the calculations of a stationary level of radiation damage are necessary for the interpretation of regularities of a radiation damage in materials under high fluence ion bombardment.
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References
P. Ehrhart, W. Schilling, and H. Ullmaier, Encyclopedia of Applied Physics 15, 429 (1996).
G. Dienes and G. Vineyard, Radiation Effects in Solids (Interscience, New York, 1957; Inostrannaya Literatura, Moscow, 1960).
K. Niwase and T. Tanabe, J. Nucl. Mater. 179–181, 218 (1991).
A. E. Gorodetsky, A. V. Markin, V. N. Chernikov, et al., Fusion Eng. Des. 43, 129 (1998).
Yu. Virgil’ev and I. P. Kalyagina, Inorg. Mater. 40 (Suppl. 1), 33 (2004).
E. S. Mashkova and V. A. Molchanov, Scattering of Medium-Energy Ions by Solid Surfaces (Atomizdat, Moscow, 1980) [in Russian].
F. F. Komarov, Ionic Implantation into Metals (Metallurgiya, Moscow, 1990) [in Russian].
A. M. Borisov and E. S. Mashkova, Nucl. Instrum. Methods Phys. Res. B 258, 109 (2007).
Sputtering of Solids by Ion Bombardment. Physical Sputtering of Single-Element Solids, Ed. by R. Berish (Springer, Berlin, 1981; Mir, Moscow, 1984).
S. Valkealahti and R. M. Nieminen, Nucl. Instrum. Methods Phys. Res. B 18, 365 (1987).
N. N. Andrianova, A. M. Borisov, Yu. S. Virgil’ev, et al., Poverkhnost. Rentgen., Sinkhrotr. Neitron. Issled., No. 3, 4 (2007).
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Original Russian Text © N.N. Andrianova, A.M. Borisov, 2008, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 3, pp. 23–26.
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Andrianova, N.N., Borisov, A.M. Simulation of radiation damage in materials under high fluence ion bombardment. J. Surf. Investig. 2, 189–192 (2008). https://doi.org/10.1134/S1027451008020055
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DOI: https://doi.org/10.1134/S1027451008020055