Abstract
The formation process of electrically active oxygen-containing complexes (thermal donors) in silicon is investigated at the initial stage of thermal treatment at T < 500°C under elastic tensile stress σ = 1 GPa. It is shown that, under these conditions, the formation of singly charged donor centers is observed in silicon when the oxygen concentration is (3–5) × 1017 cm−3. When the oxygen concentration is 9 × 1017 cm−3, doubly charged donor centers form. The depth profile of thermal donors is found in the samples studied.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
P. Wagner and J. Hage, Appl. Phys. A 49, 123 (1989).
A. Borghesi, B. Pivac, A. Sassela, et al., J. Appl. Phys. 77, 4169 (1995).
R. C. Newman, J. Phys. Condens. Matter 12, R335 (2000).
W. Götz, G. Pensl, and W. Zulehner, Phys. Rev. B 46, 4312 (1992).
V. V. Emtsev, G. A. Oganesyan, and K. Schmalz, Appl. Phys. Lett. 68, 2375 (1996).
V. V. Emtsev, B. A. Andreev, V. Yu. Davydov, et al., Physica B 340–342, 769 (2003).
S. Ganesan, A. A. Maradudin, and J. Oitmaa, Ann. Phys. 56, 556 (1970).
E. Anastassakis, A. Pinczuk, E. Burstein, et al., Solid State Commun. 8, 133 (1970).
I. I. Novak, V. V. Baptizmanskii, and L. V. Zhoga, Opt. Spektrosk. 43, 252 (1977).
J. S. Blakemore, Semiconductor Statistics (Pergamon, Oxford, 1962; Mir, Moscow, 1964).
H. J. Hoffmann, H. Nakayama, T. Nishino, et al., Appl. Phys. A 33, 47 (1984).
Author information
Authors and Affiliations
Additional information
Original Russian Text © I.I. Novak, G.A. Oganesyan, 2007, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 5, pp. 82–85.
Rights and permissions
About this article
Cite this article
Novak, I.I., Oganesyan, G.A. Features of the formation of thermal donors in silicon under elastic tensile stress. J. Surf. Investig. 1, 294–297 (2007). https://doi.org/10.1134/S1027451007030111
Received:
Issue Date:
DOI: https://doi.org/10.1134/S1027451007030111