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X-ray spherical wave scattering patterns of the epitaxial Si/GeSi/Si (001) heterosystem

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Abstract

The interference effects of x-ray diffraction topography in the Si/GeSi/Si (001) heterosystem have been investigated. This heterosystem is a film interferometer in which the GeSi solid solution layer of variable thickness serves as a separating gap. A topograph obtained for a 004 reflection (CuK α radiation) using a spherically bent monochromator demonstrates both maxima of the pendulum solution observed for the case of a thin crystal (1) and interference fringes due to the variable thickness of the separation layer (2). The correlation of effects (1) and (2) with the successive extinction effect of interference maxima on the slope of the diffraction reflection curve is shown by the calculated topographs obtained for the different ranges of the angle of radiation incidence θ (200 and 1400″). The possibility of precisely determining the thickness of the crystal separation layer of an interferometer based on the indicated effect is demonstrated.

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References

  1. U. Bonse, M. Hart, and G. H. Schwuttke, Phys. Status Solidi 33, 361 (1969).

    Article  CAS  Google Scholar 

  2. A. P. Vasilenko, A. V. Kolesnikov, et al., Poverkhnost. Rentgen. Sinkhrotr. Neitron. Issled. 9, 72 (2000).

    Google Scholar 

  3. D. K. Bowen and B. K. Tanner, High Resolution X-ray Diffractometry and Topography (Nauka, St. Petersburg, 2002; Taylor & Francis, 1998).

    Google Scholar 

  4. E. M. Trukhanov, A. P. Vasilenko, A. V. Kolesnikov, and A. A. Fedorov, in Proc. of Conf. on Modern Analysis Methods of Diffraction Data (Rontgen-Topography, Diffractometry, Electronic Microscopy) (Velikii Novgorod, 2004), p. 136.

  5. A. A. Fedorov, A. V. Kolesnikov, A. P. Vasilenko, et al., Poverkhnost. Rentgen. Sinkhrotr. Neitron. Issled. 9, 53 (2002).

    Google Scholar 

  6. S. Takagi, Acta. Crystallogr. 15, 1311 (1962).

    Article  CAS  Google Scholar 

  7. D. Taupin, Bull. Soc. Fr. Mineral. Crystallogr. 87, 469 (1964).

    CAS  Google Scholar 

  8. H. Holloway, J. Appl. Phys. 67(10), 6229 (1990).

    Article  CAS  Google Scholar 

Download references

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division RAS, Novosibirsk, Russia

    A. S. Ilin, A. P. Vasilenko, E. M. Trukhanov & A. V. Kolesnikov

  2. L-NESS and INFM Dipartimento di Fisica del Politecnico di Milano, Italy

    A. A. Fedorov

Authors
  1. A. S. Ilin
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  2. A. P. Vasilenko
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  3. E. M. Trukhanov
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  4. A. V. Kolesnikov
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  5. A. A. Fedorov
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Additional information

Original Russian Text © A.S. Ilin, A.P. Vasilenko, E.M. Trukhanov, A.V. Kolesnikov, A.A. Fedorov, 2007, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 5, pp. 47–50.

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Ilin, A.S., Vasilenko, A.P., Trukhanov, E.M. et al. X-ray spherical wave scattering patterns of the epitaxial Si/GeSi/Si (001) heterosystem. J. Surf. Investig. 1, 265–268 (2007). https://doi.org/10.1134/S1027451007030068

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  • DOI: https://doi.org/10.1134/S1027451007030068

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