Abstract
Structural features of GaSb(Si) single crystals grown under various heat and mass transfer conditions were studied by x-ray topography and by double- and triple-crystal diffractometry. It was shown that a decrease in the convective flow intensity during crystal growth by the vertical Bridgman method with axisymmetric upper heat supply in comparison with the Czochralski method eliminates growth striations (caused by microsegregation) and improves the uniformity of electrical parameters of materials. According to triple-crystal x-ray diffractometry data, the increased density of structural defects observed in some crystal regions causes significant lattice distortions, which makes an additional contribution to crystal inhomogeneity. Some specific features in x-ray topography images of growth striations, caused by a high silicon concentration and a dopant state deviation from an ideal substitutional solid solution, were revealed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
G. Müller, Crystal Growth from the Melt (Springer, Berlin, 1988; Mir, Moscow, 1991).
H. U. Walter, ESA Journal 7, 235 (1983).
I. L. Shul’pina, V. V. Ratnikov, and M. P. Shcheglov, Poverkhnost. Rentgen. Sinkhrotr. Neitron. Issled. 6, 20 (2004).
I. A. Prokhorov, B. G. Zakharov, and V. I. Strelov, Poverkhnost. Rentgen. Sinkhrotr. Neitron. Issled. 6, 23 (2005).
I. A. Prokhorov, I. L. Shul’pina, and V. I. Strelov, Phys. Status. Solidi C 2, 1902 (2005).
A. A. Boguslavskii, V. V. Sazonov, and S. M. Sokolov, Kosm. Issl. 42(2), 155 (2004).
A. Segmuller, J. Angilelo, J. La Placa Sam, J. Appl. Phys. 51(12), 6224 (1980).
P. I. Baranskii, V. P. Klochkov, and I. V. Potykevich, Semiconductor Electronics. Handbook (Metallurgiya, Moscow, 1967).
D. C. Miller and A. F. Witt, J. Cryst. Growth 29, 19 (1975).
I. Zh. Bezbakh, B. G. Zakharov, I. A. Prokhorov, et al., in Growth of Single Crystals and Heat and Mass Transfer. Sb. tr. 6 Mezhdunar. konf. ISSS-2005 (GNTs RF FEI, Obninsk, 2005), vol. 2, p. 352.
J. Hornstra and W. J. Bartels, J. Cryst. Growth 44, 513 (1978).
O. Madelung, Physics of III–V Compounds (Wiley, New York, 1964; Mir, Moscow, 1967). 13. J. E. Lawrence, J. Electrochem. Soc. 13, 819 (1966). 14. P.F. Fewster and N. L. Andrew, J. Appl. Crystallogr. 28, 451 (1995).
J. E. Lawrence, J. Electrochem. Soc. 13, 819 (1966).
P. F. Fewster and N. L. Andrew, J. Appl. Cryst. 28, 451 (1995).
Author information
Authors and Affiliations
Additional information
Original Russian Text © I.A. Prokhorov, Yu.A. Serebryakov, E.N. Korobeinikova, B.G. Zakharov, V.V. Ratnikov, I.L. Shul’pina, 2007, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 5, pp. 36–41.
Rights and permissions
About this article
Cite this article
Prokhorov, I.A., Serebryakov, Y.A., Korobeinikova, E.N. et al. X-ray study of structural features of GaSb(Si) single crystals grown using a set of diffraction methods under various heat and mass transfer conditions. J. Surf. Investig. 1, 255–259 (2007). https://doi.org/10.1134/S1027451007030044
Received:
Issue Date:
DOI: https://doi.org/10.1134/S1027451007030044