Abstract
Electrical conductivity, dielectric permittivity and mechanical hardness of the polycrystalline CeO2 + xSm2O3 (x = 0, 10.9–15.9 mol %) films prepared by Electron Beam Physical Vapour Deposition (EB-PVD) and Ionic Beam Assisted Deposition, (IBAD), techniques were investigated in dependence on their structure and microstructure influenced by the deposition conditions, namely composition, deposition temperature and Ar+ ion bombardment. The electrical conductivity of doped ceria prepared without Ar+ ion bombardment and investigated by the impedance spectroscopy, IS, was found to be predominantly ionic one under the oxidizing atmosphere/low-temperature conditions and the higher amounts of Sm2O3 (>10 mol %) used. The bulk conductivity as a part of total measured conductivity was a subject of interest because the grain boundary conductivity was found to be ∼3 orders of magnitude lower than the corresponding bulk conductivity. Ar+ ion bombardment acted as a reducer (Ce4+ → Ce3+) resulting in the development of electronic conductivity. Dielectric permittivity determined from the bulk parallel capacitance measured at room temperature and the frequency of 1 MHz, similarly as the mechanical hardness measured by indentation (classical Vickers and Depth Sensing Indentation-DSI) techniques were also found to be dependent on the deposition conditions. The approximative value of hardness for the investigated films deposited on the substrate was estimated using a simple phenomenological model described by the power function HV = HV 0 + aP b and compared with the so-called apparent hardness (substrate + investigated film) determined by the classical Vickers formula. Results obtained are analyzed and discussed.
Similar content being viewed by others
References
Eguchi, K., Setoguchi, T., Inoue, T., and Arai, H., Solid State Ionics, 1992, vol. 52, p. 165.
Hartmanová, M., Gmucová, K., Jergel, M., Thurzo, I., Kundracik, F., and Brunel, M., Thin Solid Films, 1999, vol. 345, p. 330.
Wilk, G.D., Wallace, R.M., and Anthony, J.M.A., J. Appl. Phys., 2001, vol. 89, p. 5243.
Yasuda, K., Suenaga, S., Inagaki, H., Goto, Y., and Takeda, H., J. Mater. Sci., 2000, vol. 35, p. 317.
Koch, T. and Ziemann, P., Thin Solid Films, 1997, vol. 303, p. 122.
Hartmanova, M., Jergel, M., Mansilla, C., Holgado, J.P., Zemek, J., Jurek, K., and Kundracik, F., Appl. Surf. Sci., 2009, vol. 255, p. 9085.
Mansilla, C., Holgado, J.P., Espinos, J.P., Gonzales-Elipe, A.R., and Yubero, F., Surf Coat. Technol., 2007, vol. 202, p. 1256.
Urusovskaya, A.A., Sovremennaya Kristallografyia, Moscow: Izd. Nauka, 1981, vol. 4, p. 47.
Oliver, W.C. and McHargue, C.J., Thin Solid Films, 1988, vol. 161, p. 117.
Oliver, W.C. and Pharr, G.M., J. Mater. Res., 1992, vol. 7, p. 1564.
Laursen, T.A. and Simo, J.C., J. Mater. Res., 1992, vol. 7, p. 618.
Bolshakov, A. and Pharr, G.M., J. Mater. Res., 1998, vol. 13, p. 1049.
Shannon, R.D., Acta Crystallogr. A, 1976, vol. 32, p. 751.
Badwal, S.P.S. and Ciacchi, F.T., Ionics, 2000, vol. 6, p. 1.
Tuller, H.L. and Nowick, A.S., J. Phys. Chem. Solids, 1977, vol. 38, p. 859.
Naik, K. and Tien, T.Y., J. Phys. Chem. Solids, 1978, vol. 39, p. 311.
Kröger, F.A., The Chemistry of Imperfect Crystals, Amsterdam: North-Holland Publishing Company, 1964.
Glushkova, V.B., Hanic, F., and Sazonova, L.V., Ceramurgia Int., 1978, vol. 4, p. 176.
Hanic, F., Hartmanová, M., and Krcho, S., Solid State Ionics, 1988, vol. 31, p. 167.
Hartmanová, M., Hanic, F., Putyera, K., Tunega, D., and Glushkova, V.B., Mater. Chem. Phys., 1993, vol. 34, p. 175.
Hartmanová, M., Lomonova, E.E., Kubel, F., Schneider, J., Buršíková, V., Jergel, M., Navrátil, V., Kundracik, F., J. Mater. Sci., 2009, vol. 44, p. 234.
Balazs, G.B. and Glass, R.S., Solid State Ionics, 1995, vol. 76, p. 155.
Hong, S.J., Mehta, K., and Virkar, A.V., J. Electrochem. Soc., 1998, vol. 145, p. 638.
Badwal, S.P.S. and Drennan, J., Solid Sate Ionics, 1998, vol. 28, p. 1451.
Guo, X., Sigle, W., and Maier, J., J. Amer. Ceram. Soc., 2003, vol. 83, p. 77.
Guo, X. and Maier, J., J. Electrochem. Soc., 2001, vol. 148, p. E121.
Shon, I.-J., Park, H.-K., Nam, K.-S., and Lee, K.-T., Journal of Ceramic Processing Research, 2008, vol. 9, p. 325.
Butler, V., Catlow, C.R.A., Fender, B.E.F., and Harding, J.H., Solid State Ionics, 1983, vol. 8, p. 109.
Inaba, H. and Tagawa, H., Solid State Ionics, 1996, vol. 83, p. 1.
Omar, S., Wachsman, E.D., and Nino, J.C., Solid State Ionics, 2008, vol. 178, p. 1890.
Omar, S., Wachsman, E.D., Jones, J.L., and Nino, J.C., J. Amer. Ceram. Soc., 2009, vol. 92, p. 2674.
Petrov, I., Barna, P.B., Hultman, L., and Greene, J.E., J. Vac. Sci. Techol. A, 2003, vol. 21, p. S117.
Miyahara, Y., J. Appl. Phys., 1992, vol. 71, p. 2309.
Hartmanová, M., Gmucová, K., and Thurzo, I., Solid State Ionics, 2000, vol. 130, p. 105.
Chiodelli, G., Magistris, A., Scagliotti, M., and Parmigiani, F., J. Mater. Sci., 1988, vol. 23, p. 1159.
Hench, L.L. and West, J.K., Principles of Electronic Ceramics, Singapore: Willey, 1990, p. 201.
Inoue, T., Yamamoto, Y., Koyma, S., Suzuki, S., and Ueda, Y., Appl. Phys. Lett., 1990, vol. 56, p. 1332.
Tian, Ch. and Chan, S.-W., Mater. Res. Soc. Symp. Proc., 1996, vol. 411, p. 277.
Tsai, W.-Ch. and Tseng, T.-Y., J. Mater, Sci.: Mater Electronics, 1997, vol. 8, p. 313.
Fukuda, H., Miura, M., Sakuma, S., and Nomura, S., Jpn. J. Appl. Phys., 1998, vol. 37, p. 4158.
Robertson, J., Eur. Phys. J. Appl. Phys., 2004, vol. 20, p. 265.
Alexopoulos, P.S. and O’sullivan, T.C., Annu. Rev. Mater. Sci., 1990, vol. 20, p. 391.
Jonson, B. and Hogmark, S., Thin Solid Films, 1984, vol. 114, p. 257.
Burnett, P.J. and Rickerby, D.S., Thin Solid Films, 1987, vol. 148, p. 41.
Bull, S.J. and Rickerby, D.S., Surf. Coat. Technol., 1990, vol. 42, p. 149.
Chicot, D. and Lesage, J., Thin Solid Films, 1995, vol. 254, p. 123.
Lesage, J., Pertuz, A., Puchi-Cabrera, E.S., and Chicot, D., Thin Solid Films, 2006, vol. 497, p. 232.
Rice, R.W., Wu, C.Cm., and Borchelt, F., J. Amer. Ceram. Soc., 1994, vol. 477, p. 2539.
Sameshima, S., Ichikawa, T., Kawaminami, M., and Hirata, Y., Materials Chemistry and Physics, 1999, vol. 61, p. 31.
Hartmanová, M., Jergel, M., Navrátil, V., Navrátil, K., Gmucová, K., Gandarilla, F.C., Zemek, J., Chromik, Š., and Kundracik, F., Acta Physica Slovaca, 2005, vol. 55, p. 247.
Author information
Authors and Affiliations
Corresponding author
Additional information
Published in Russian in Elektrokhimiya, 2011, Vol. 47, No. 5, pp. 539–551.
After the paper delivered at the 10th Meeting “Fundamental Problems of Solid-State Ionics”, Chernogolovka, 2010.
The article is published in the original.
Rights and permissions
About this article
Cite this article
Hartmanová, M., Navrátil, V., Buršíková, V. et al. Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films. Russ J Electrochem 47, 505–516 (2011). https://doi.org/10.1134/S1023193511050041
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1023193511050041