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Structural and thermal stability of BIMEVOX oxygen semiconductors

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Abstract

The results on the structural and thermal stability of different modifications of solid solutions Bi4V2 − x Fe x O11 − δ (BIFEVOX), where x = 0.05–0.6, and Bi4V2 − x Cu x/2Ti x/2O11 − δ (BICUTIVOX), where x = 0.025–0.50, are shown. The stability is assessed by varying the thermodynamic parameters of the medium and also the time parameters with the use of modern methods, namely, the high-temperature X-ray diffraction analysis, the differential scanning calorimetry, and the dilatometry. The γ-modification of BIFEVOX is shown to be stable in a wide range of temperatures and oxygen partial pressures.

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References

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Correspondence to E. S. Buyanova.

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Original Russian Text © M.V. Morozova, E.S. Buyanova, S.A. Petrova, V.V. Khisametdinova, Yu.V. Emel’yanova, A.N. Shatokhina, V.M. Zhukovskii, 2011, published in Elektrokhimiya, 2011, Vol. 47, No. 4, pp. 475–479.

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Morozova, M.V., Buyanova, E.S., Petrova, S.A. et al. Structural and thermal stability of BIMEVOX oxygen semiconductors. Russ J Electrochem 47, 448–452 (2011). https://doi.org/10.1134/S1023193511040100

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  • DOI: https://doi.org/10.1134/S1023193511040100

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