Abstract
Computational simulation techniques have been extensively used to investigate physical phenomena in semiconductor devices with similar techniques utilized for the study of their competitors, ionic devices [1]. This paper is focusing on models based on the physics of carrier transport referring also shortly to equivalent circuit models, a much celebrated tool in the area of ionics.
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Published in Russian in Elektrokhimiya, 2009, Vol. 45, No. 6, pp. 693–698.
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Published by report at IX Conference “Fundamental Problems of Solid State Ionics”, Chernogolovka, 2008.
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Thoma, K.A.T. Problems and the progress made in modeling devices based on ionic materials. Russ J Electrochem 45, 652–656 (2009). https://doi.org/10.1134/S1023193509060056
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DOI: https://doi.org/10.1134/S1023193509060056