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Thermal stability of proton-conducting silicophosphate materials formed by sol-gel method

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Abstract

This work estimated ionic conductivity and studied thermal stability of proton-conducting xerogel materials and films formed from sol-gel system based on tetraethoxysilane and orthophosphoric acid modified with H2SO4. Ionic conductivity was estimated by means of complex impedance spectroscopy. Thermal stability (temperature effect to chemical composition) of the synthesized materials was studied by means of differential thermal analysis and FTIR. Basing on the gained results, addition of H2SO4 as a modifying compound was shown to increase ionic conductivity of silicophosphate materials up to ca. 10−2 S/cm at room temperature due to their structure formed by guest-host mechanism, where sulfate ions are retained by formed by silocophosphate sol-gel matrix.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 25, Politekhnicheskaya, St. Petersburg, 194021, Russia

    A. D. Remenyuk, T. V. Khamova, A. A. Nechitailov, A. A. Tomasov & I. N. Trapeznikova

  2. Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences, 2, Makarova, St. Petersburg, 199034, Russia

    T. V. Khamova & O. A. Shilova

Authors
  1. A. D. Remenyuk
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  2. T. V. Khamova
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  3. A. A. Nechitailov
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  4. O. A. Shilova
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  5. A. A. Tomasov
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  6. I. N. Trapeznikova
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Correspondence to A. D. Remenyuk.

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Original Russian Text © A.D. Remenyuk, T.V. Khamova, A.A. Nechitailov, O.A. Shilova, A.A. Tomasov, I.N. Trapeznikova, 2009, published in Elektrokhimiya, 2009, Vol. 45, No. 5, pp. 645–650.

Published by report at IX Conference “Fundamental Problems of Solid State Ionics”, Chernogolovka, 2008.

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Remenyuk, A.D., Khamova, T.V., Nechitailov, A.A. et al. Thermal stability of proton-conducting silicophosphate materials formed by sol-gel method. Russ J Electrochem 45, 609–614 (2009). https://doi.org/10.1134/S1023193509050218

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  • DOI: https://doi.org/10.1134/S1023193509050218

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