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Nanocrystalline nitrogenated diamond: An N-type electrode material

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Abstract

Nitrogenated nanocrystalline diamond thin films are grown from arc-plasma in CH4/Ar/H2/N2-gas mixtures and characterized by AFM-and Raman spectroscopy, X-ray diffraction and resistivity measurements. It is shown by Mott-Schottky plots taken in indifferent electrolyte (0.5 M H2SO4) that the behavior of the nitrogenated nanocrystalline diamond thin-film electrodes resembles that of n-type semiconductor; the donor effective concentration therein is estimated.

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Authors and Affiliations

  1. Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia

    Yu. V. Pleskov

  2. Prokhorov Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russia

    S. M. Pimenov & V. G. Ralchenko

  3. Industrial Technology Research Institute, Bldg. 77, 195 Chung Hsing Rd. Sec. 4, Chutung, Hsinchu, Taiwan, 310, ROC

    Po-Yee Lim

Authors
  1. Yu. V. Pleskov
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  2. S. M. Pimenov
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  3. Po-Yee Lim
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  4. V. G. Ralchenko
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Correspondence to Yu. V. Pleskov.

Additional information

Original Russian Text © Yu.V. Pleskov, S.M. Pimenov, Po-Yee Lim, V.G. Ralchenko, 2008, published in Elektrokhimiya, 2008, Vol. 44, No. 7, pp. 928–932.

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Pleskov, Y.V., Pimenov, S.M., Lim, PY. et al. Nanocrystalline nitrogenated diamond: An N-type electrode material. Russ J Electrochem 44, 861–865 (2008). https://doi.org/10.1134/S102319350807015X

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  • DOI: https://doi.org/10.1134/S102319350807015X

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