Abstract
The possibility of obtaining semiconductors that do not contain surface-growth defects using postgrowth processing based on the multiple ion beam sputter deposition of a submicron-thick aluminum oxide layer was demonstrated by the example of gallium nitride films on leucosapphire and silicon nitride. The obtained films are promising as substrates for the formation of spintronic structures.
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Original Russian Text © A.V. Bespalov, O.L. Golikova, A. A. Evdokimov, 2010, published in Khimicheskaya Tekhnologiya, 2010, Vol. 11, No. 7, pp. 404–406.
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Bespalov, A.V., Golikova, O.L. & Evdokimov, A.A. Substrates for spintronic structures based on epitaxial gallium nitride films. Theor Found Chem Eng 46, 387–389 (2012). https://doi.org/10.1134/S0040579512040033
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DOI: https://doi.org/10.1134/S0040579512040033