Abstract
A mathematical model of the process of the growth of semiconductor crystals by the Bridgman method is developed. In modeling of a known space experiment, the character of convective flows and their influence on the of the axial and radial impurity distribution during the growth of a crystal are studied. As a result of numerical calculations, the possibility of formation of the large radial nonuniformity of the impurity distribution observed in a number of space experiments is shown.
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Original Russian Text © N.A. Baldina, B.V. Vasekin, V.A. Goncharov, 2009, published in Teoreticheskie Osnovy Khimicheskoi Tekhnologii, 2009, Vol. 43, No. 4, pp. 371–378.
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Baldina, N.A., Vasekin, B.V. & Goncharov, V.A. Mathematical modeling of radial impurity distribution in crystals grown under laminar convection conditions. Theor Found Chem Eng 43, 353–360 (2009). https://doi.org/10.1134/S0040579509040010
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DOI: https://doi.org/10.1134/S0040579509040010