Abstract
p-Type porous silicon is more suitable for CMOS devices than n-type. Due to its variable microstructure, comparatively large surface area, excellent optical and electrical properties, p-type porous silicon can be used in many potential applications for CMOS/MEMS and device integration. It is difficult to modify the optical-electrical properties of p-type porous silicon. In this paper, the nano/micro structure and photoluminescence (PL) of p-type porous silicon have been investigated by considering of the effects of different current conditions and different electrolytes. The results show that the PL performance can be greatly enhanced by the modification of the HF-containing electrolyte with strong oxidizing agent (H2O2) and organic solvent (DMF). Meanwhile, the p-type porous silicon has good UV response characteristics. It is helpful for understanding the PL of p-type porous silicon nano/micro structure, which also implies a potential method for the design of ultraviolet detectors.
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Funding
This work was supported by grants from natural science foundation of Jiangsu Province (BK20180098), open research fund of national laboratory of solid state microstructures of Nanjing University (M32045 and M33042).
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Ding, J., Ge, L., Zhu, X. et al. Investigation on the Photoluminescence of p-Type Porous Silicon for Ultraviolet Detector. Russ. J. Phys. Chem. 95, 2663–2666 (2021). https://doi.org/10.1134/S0036024421130069
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DOI: https://doi.org/10.1134/S0036024421130069