Abstract
Calculations for the concentration of vacancies in the metal sublattice of Cd x Hg1 − x Te ternary compound in dependence on temperature and composition in the range x = 0.2–1.0 are presented. In our calculations, the vacancy concentration was determined according to the reaction of the joining of the crystal lattices of two sites, one of which was occupied by an atom of tellurium while the site in the metal sublattice remained vacant. Using this approach, the concentration of vacancies in the metal sublattice was described via the activity of tellurium, allowing us to use it for solid solutions and a number of cases in which it is difficult to describe the pressure of the metal correctly. The enthalpy of formation was determined for vacancies in HgTe using the experimental data on the concentration of vacancies in Cd x Hg1 − x Te samples. It was shown that the natural oxide occurring on the surface of the investigated films in air can lead to changes in their electrophysical parameters during heat treatment.
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References
Yu. G. Sidorov and I. V. Sabinina, Zh. Fiz. Khim. 59, 2717 (1985).
R. F. Brebrick, K.-T. Chen, H.-C. Liu, R. Fang, and T.-C. Yu, High Temp. Sci. 31, 181 (1991).
K.-T. Chen, H.-C. Liu, R. Fang, T.-C. Yu, and R. F. Brebrick, Solid State Commun. 81, 1025 (1992).
T.-C. Yu and R. F. Brebrick, J. Phase Equilib. 13, 476 (1992).
T.-C. Yu and R. F. Brebrick, Properties of Narrow-Gap Cd-Based Compounds, Ed. by P. Capper (INSPEC, Inst. of Electr., London, 1994).
V. P. Vasil’ev, M. N. Mamontov, and M. A. Bykov, Vestn. Mosk. Univ., Ser. Khim. 31, 211 (1990).
A. Milnes, Deep Impurities in Semiconductors (Wiley, New York, 1973; Mir, Moscow, 1977).
F. A. Kroger, Chemistry of Imperfect Crystals, Sect. 16.9.1 (North-Holland, Amsterdam, 1964).
A. Rogalski and J. Piotrowski, Progress Quantum Electron. 12, 87 (1988).
R. Smith, Semiconductors (Cambridge Univ., Cambridge, 1959; Mir, Moscow, 1982).
M. A. Berding, Appl. Phys. Lett. 74, 552 (1999).
M. A. Berding, M. van Schifgaarde, and A. Sher, J. Vac. Sci. Technol. 10, 1471 (1992).
M. A. Berding, M. van Schifgaarde, and A. Sher, Phys. Rev. B 50, 1519 (1994).
J. Franc, P. Höschl, R. Grill, et al., J. Electron. Mater. 30, 595 (2001).
S. S. Chern, H. R. Vydyanath, and F. A. Kröger, J. Solid State Chem. 14, 33 (1975).
H. R. Vydyanath, J. Electrochem. Soc. 128, 2609 (1981).
J. Yang, Z. Yu, and D. Tang, J. Cryst. Growth 72, 275 (1985).
H. R. Vydyanath, J. C. Donovan, and D. A. Nelson, J. Electrochem. Soc. 128, 2625 (1981).
G. L. Destefanis, J. Cryst. Growth 86, 700 (1998).
R. F. Brebrick and A. J. Strauss, Phys. Chem. Sol. 25, 1441 (1964).
Y.-G. Sha, K. T. Chen, R. Fang, and R. F. Brebrick, J. Electrochem. Soc. 132, 3837 (1989).
C. H. Su, P.-K. Liao, T. Tung, and R. F. Brebrick, High Temp. Sci. 14, 181 (1981).
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Original Russian Text © V.S. Varavin, G.Yu. Sidorov, Yu.G. Sidorov, 2010, published in Zhurnal Fizicheskoi Khimii, 2010, Vol. 84, No. 9, pp. 1605–1612.
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Varavin, V.S., Sidorov, G.Y. & Sidorov, Y.G. Concentration of vacancies in the metal sublattice of cadmium and mercury tellurides solid solutions depending on composition. Russ. J. Phys. Chem. 84, 1459–1466 (2010). https://doi.org/10.1134/S0036024410090013
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DOI: https://doi.org/10.1134/S0036024410090013