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The influence of an electric field on the wetting of an SiO2 film by ionic liquids

  • Colloid Chemistry and Electrochemistry
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Abstract

The electrowetting of a dielectric SiO2 film 100 nm thick by drops (D = 2–3 mm) of [C4mIm][PF6], [C6mIm][PF6], and [C6mIm][BTI] ionic liquids was studied at |U| ≤ 60 V in a ∼10−8 mbar vacuum. Electrocapillary curves of the dependence of the wetting angle on electric field potential were constructed with an accuracy of ±1 deg. In conformity with the Young-Lippman equation, the wetting angle θ° decreased by the parabolic law from 51° to 43° for [C4mIm][PF6], from 48° to 38° for [C6mIm][PF6], and from 35° to 27° for [C6mIm][BTI] as |U| increased at 298 K. The electrocapillary curve branches were situated symmetrically in the (θ°, U) coordinates with respect to the line passing through the point U = 0; that is, zero-charge potential is zero for the electrowetting of the dielectric film by the ionic liquids. The capacitance of the double electrical layer at the ionic liquid-dielectric interface was determined. This value was found to be 4.65, 2.93, and 1.73 μF/m2 for the electrowetting of the SiO2 film at 298 K by the ionic liquids specified, respectively.

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Authors and Affiliations

  1. Institute of Chemical Problems, Academy of Sciences of Azerbaijan, Baku, Azerbaijan

    I. G. Mekhdiev

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  1. I. G. Mekhdiev
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Correspondence to I. G. Mekhdiev.

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Original Russian Text © I.G. Mekhdiev, 2010, published in Zhurnal Fizicheskoi Khimii, 2010, Vol. 84, No. 4, pp. 779–784.

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Mekhdiev, I.G. The influence of an electric field on the wetting of an SiO2 film by ionic liquids. Russ. J. Phys. Chem. 84, 689–694 (2010). https://doi.org/10.1134/S0036024410040291

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  • DOI: https://doi.org/10.1134/S0036024410040291

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