Silicon evaporation has been investigated by high-temperature mass spectrometry, and the saturation vapor pressure of silicon over its melt has been determined over the temperature range from 1739 and 2326 K. The saturation vapor pressure data obtained via silicon evaporation from Knudsen cells made of molybdenum, tungsten, molybdenum disilicide-lined molybdenum, and graphite silicided by the gas-phase method are compared. Among these materials, silicided graphite is the most inert toward silicon vapor. The silicon partial pressures measured in the silicided graphite cell are close to the recommended values.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Price excludes VAT (USA)
Tax calculation will be finalised during checkout.
V. G. Sevast’yanov, P. Ya. Nosatenko, V. V. Gorskii, et al., Russ. J. Inorg. Chem. 55, 2073 (2010).
T. Tomooka, Y. Shoji, and T. Matsui, J. Mass Spectrom. Soc. Jpn. 47, 49 (1999).
Thermodynamic Properties of Individual Substances: A Handbook, Ed. by V. P. Glushko (Nauka, Moscow, 1978–1984) vols. 1–4 [in Russian].
R. C. Paule and J. Mandel, Pure Appl. Chem. 31, 371 (1972).
Chemical Bond Dissociation Energies, Ionization Potentials and Electron Affinity: A Handbook, Ed. by V. N. Kondrat’ev (Nauka, Moscow, 1974) [in Russian].
J. Drowart, G. De Maria, and M. G. Inghram, J. Chem. Phys. 29, 1015 (1958).
V. L. Stolyarova and G. A. Semenov, Mass Spectrometric Study of the Vaporization of Oxide Systems (Wiley, Chichester, 1994).
J. B. Mann, J. Chem. Phys. 46(5), 1646 (1967).
CODATA Key Values for Thermodynamics, Ed. by J. D. Cox, D. D. Wagman, and V. A. Medvedev (Hemisphere Publishing Corp., New York, 1984).
R. L. Batdorf and F. M. Smits, J. Appl. Phys. 30, 259 (1959).
J. Drowart and G. De Maria, in Silicon Carbide (Pergamon, London, 1960), p. 16.
P. Grieverson and C. B. Alcock, Special Ceramics, Ed. by P. Popper, (London, 1960).
A. V. Tseplyaeva, Yu. I. Priselkov, and V. V. Karelin, Vestn. Mosk. Univ., Ser. Khim., No. 5, 36 (1960).
V. S. Zemskov, Izv. Akad. Nauk SSSR, Neorg. Mater. 1(5), 648 (1965).
E. A. Gulbransen, K. F. Andrew, and F. A. Brassart, J. Electrochem. Soc. 113, 834 (1966).
K. F. Zmbov, L. L. Ames, and J. L. Margrave, High Temp. Sci. 5, 235 (1973).
S. G. Davis, D. F. Anthrop, and A. W. Searcy, J. Chem. Phys. 34, 659 (1961).
I. S. Kulikov, Thermal Dissociation of Compounds (Metallurgiya, Moscow, 1969) [in Russian].
A. Searcy and A. Tharp, J. Phys. Chem. 64, 1539 (1960).
I. Barin, O. Knacke, and O. Kubaschewski, Thermochemical Properties of Inorganic Substances (Springer, Berlin, 1973).
M. Khansen and L. Anderko, Refractory Compounds (Metallurgizdat, Moscow, 1963) [in Russian].
J. L. Margrave, L. N. Dreger, and V. V. Dadape, J. Phys. Chem. 66, 1556 (1962).
D. Hildenbrand and H. Hall, J. Phys. Chem. 67, 888 (1963).
K. F. Zmbov and J. L. Margrave, J. Am. Chem. Soc. 89, 2492 (1967).
Original Russian Text © S.I. Lopatin, V.L. Stolyarova, V.G. Sevast’yanov, P.Ya. Nosatenko, V.V. Gorskii, D.V. Sevast’yanov, N.T. Kuznetsov, 2012, published in Zhurnal Neorganicheskoi Khimii, 2012, Vol. 57, No. 2, pp. 262–269.
Rights and permissions
About this article
Cite this article
Lopatin, S.I., Stolyarova, V.L., Sevast’yanov, V.G. et al. Determination of the saturation vapor pressure of silicon by Knudsen cell mass spectrometry. Russ. J. Inorg. Chem. 57, 219–225 (2012). https://doi.org/10.1134/S0036023612020167
- Boron Nitride
- Saturation Vapor Pressure
- Liquid Silicon
- Effusion Cell
- Molten Silicon