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Magnetic properties of dilute magnetic semiconductor Cd0.82Mn0.18GeAs2 under high pressures

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Abstract

We have studied the effect of high pressures on the electrical and magnetic properties of dilute magnetic semiconductor Cd0.82Mn0.18GeAs2. Electrical resistivity, Hall coefficient, transverse and longitudinal magnetic resistance, and magnetic susceptibility have been measured under high pressures (up to 9 GPa). The energy of a manganese impurity level was estimated at 155 meV from electrical resistivity and Hall factor versus temperature curves at the atmospheric pressure. Structural and magnetic phase transitions have been discovered in Hall resistance versus magnetic field curves measured at various temperatures; abnormal and normal Hall factors have been calculated.

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Authors and Affiliations

  1. Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, Makhachkala, Russia

    A. Yu. Mollaev, I. K. Kamilov, R. K. Arslanov, U. Z. Zalibekov & T. R. Arslanov

  2. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia

    S. F. Marenkin & I. V. Fedorchenko

Authors
  1. A. Yu. Mollaev
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  2. I. K. Kamilov
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  3. S. F. Marenkin
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  4. R. K. Arslanov
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  5. U. Z. Zalibekov
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  6. T. R. Arslanov
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  7. I. V. Fedorchenko
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Corresponding author

Correspondence to A. Yu. Mollaev.

Additional information

Original Russian Text © A.Yu. Mollaev, I.K. Kamilov, S.F. Marenkin, R.K. Arslanov, U.Z. Zalibekov, T.R. Arslanov, I.V. Fedorchenko, 2011, published in Zhurnal Neorganicheskoi Khimii, 2011, Vol. 56, No. 6, pp. 982–985.

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Mollaev, A.Y., Kamilov, I.K., Marenkin, S.F. et al. Magnetic properties of dilute magnetic semiconductor Cd0.82Mn0.18GeAs2 under high pressures. Russ. J. Inorg. Chem. 56, 924–927 (2011). https://doi.org/10.1134/S0036023611060180

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  • DOI: https://doi.org/10.1134/S0036023611060180

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