We have studied the effect of high pressures on the electrical and magnetic properties of dilute magnetic semiconductor Cd0.82Mn0.18GeAs2. Electrical resistivity, Hall coefficient, transverse and longitudinal magnetic resistance, and magnetic susceptibility have been measured under high pressures (up to 9 GPa). The energy of a manganese impurity level was estimated at 155 meV from electrical resistivity and Hall factor versus temperature curves at the atmospheric pressure. Structural and magnetic phase transitions have been discovered in Hall resistance versus magnetic field curves measured at various temperatures; abnormal and normal Hall factors have been calculated.
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A. Yu. Mollaev, R. K. Arslanov, U. Z. Zalibekov, et al., Neorg. Mater. 41(1), 11 (2005).
A. Yu. Mollaev, I. K. Kamilov, R. K. Arslanov, et al., J. Phys.: Conf. Ser. 121, 022010 (2008).
A. Yu. Mollaev, I. K. Kamilov, R. K. Arslanov, et al., Phys. Status Solidi 246(3), 655.
G. A. Medvedkin, T. Ishibashi, T. Nishi, et al., Jpn. J. Appl. Phys. 39, L949 (2000).
G. A. Medvedkin, T. Ishibashi, T. Nishi, and K. Sato, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 35(3), 305 (2001).
L. G. Khvostanstev, L. P. Vereshchagin, and A. P. Novikov, High Press. 9(6), 637 (1977).
A. Yu. Mollaev, L. A. Saipulaeva, R. K. Arslanov, and S. F. Marenkin, Neorg. Mater. 37(4), 405 (2001).
P. M. Krstajic, F. M. Peeters, V. A. Ivanov, and K. Kikoin, Phys. Rev. B: 70, 195215 (2004).
R. P. Khosla and J. R. Low. Fischer, Phys. Rev. B: 6(10), 4073 (1972).
Original Russian Text © A.Yu. Mollaev, I.K. Kamilov, S.F. Marenkin, R.K. Arslanov, U.Z. Zalibekov, T.R. Arslanov, I.V. Fedorchenko, 2011, published in Zhurnal Neorganicheskoi Khimii, 2011, Vol. 56, No. 6, pp. 982–985.
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Mollaev, A.Y., Kamilov, I.K., Marenkin, S.F. et al. Magnetic properties of dilute magnetic semiconductor Cd0.82Mn0.18GeAs2 under high pressures. Russ. J. Inorg. Chem. 56, 924–927 (2011). https://doi.org/10.1134/S0036023611060180
- Electrical Resistivity
- Magnetic Field Strength
- Magnetic Semiconductor
- Magnetic Phase Transition
- Hall Resistance